PMID- 32277138
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210410
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 10
IP  - 1
DP  - 2020 Apr 10
TI  - Temperature and Size Effect on the Electrical Properties of Monolayer Graphene 
      based Interconnects for Next Generation MQCA based Nanoelectronics.
PG  - 6240
LID - 10.1038/s41598-020-63360-6 [doi]
LID - 6240
AB  - Graphene interconnects have been projected to out-perform Copper interconnects in 
      the next generation Magnetic Quantum-dot Cellular Automata (MQCA) based 
      nano-electronic applications. In this paper a simple two-step lithography process 
      for patterning CVD monolayer graphene on SiO(2)/Si substrate has been used that 
      resulted in the current density of one order higher magnitude as compared to the 
      state-of-the-art graphene-based interconnects. Electrical performances of the 
      fabricated graphene interconnects were evaluated, and the impact of temperature 
      and size on the current density and reliability was investigated. The maximum 
      current density of 1.18 x10(8) A/cm(2) was observed for 0.3 mum graphene 
      interconnect on SiO(2)/Si substrate, which is about two orders and one order 
      higher than that of conventionally used copper interconnects and CVD grown 
      graphene respectively, thus demonstrating huge potential in outperforming copper 
      wires for on-chip clocking. The drop in current at 473 K as compared to room 
      temperature was found to be nearly 30%, indicating a positive temperature 
      coefficient of resistivity (TCR). TCR for all cases were studied and it was found 
      that with decrease in width, the sensitivity of temperature also reduces. The 
      effect of resistivity on the breakdown current density was analysed on the 
      experimental data using Matlab and found to follow the power-law equations. The 
      breakdown current density was found to have a reciprocal relationship to graphene 
      interconnect resistivity suggesting Joule heating as the likely mechanism of 
      breakdown.
FAU - Debroy, Sanghamitra
AU  - Debroy S
AD  - Department of Electrical Engineering, Indian Institute of Technology, Hyderabad, 
      India.
FAU - Sivasubramani, Santhosh
AU  - Sivasubramani S
AD  - Department of Electrical Engineering, Indian Institute of Technology, Hyderabad, 
      India.
FAU - Vaidya, Gayatri
AU  - Vaidya G
AD  - Department of Electronic Materials Engineering, Research School of Physics, The 
      Australian National University, ACT, 2601, Australia.
FAU - Acharyya, Swati Ghosh
AU  - Acharyya SG
AD  - School of Engineering Sciences and Technology, University of Hyderabad, 
      Hyderabad, India.
FAU - Acharyya, Amit
AU  - Acharyya A
AD  - Department of Electrical Engineering, Indian Institute of Technology, Hyderabad, 
      India. amit_acharyya@iith.ac.in.
LA  - eng
PT  - Journal Article
DEP - 20200410
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
SB  - IM
PMC - PMC7148373
COIS- The authors declare no competing interests.
EDAT- 2020/04/12 06:00
MHDA- 2020/04/12 06:01
PMCR- 2020/04/10
CRDT- 2020/04/12 06:00
PHST- 2019/05/01 00:00 [received]
PHST- 2019/11/12 00:00 [accepted]
PHST- 2020/04/12 06:00 [entrez]
PHST- 2020/04/12 06:00 [pubmed]
PHST- 2020/04/12 06:01 [medline]
PHST- 2020/04/10 00:00 [pmc-release]
AID - 10.1038/s41598-020-63360-6 [pii]
AID - 63360 [pii]
AID - 10.1038/s41598-020-63360-6 [doi]
PST - epublish
SO  - Sci Rep. 2020 Apr 10;10(1):6240. doi: 10.1038/s41598-020-63360-6.