PMID- 32290236
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200928
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 11
IP  - 4
DP  - 2020 Apr 10
TI  - A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios.
LID - 10.3390/mi11040398 [doi]
LID - 398
AB  - Power amplifiers applied in modern active electronically scanned array (AESA) 
      radars and 5G radios should have similar features, especially in terms of phase 
      distortion, which dramatically affects the spectral regrowth and, moreover, they 
      are difficult to be compensated by predistortion algorithms. This paper presents 
      a GaN-based power amplifier design with a reduced level of transmittance 
      distortions, varying in time, without significantly worsening other key features 
      such as output power, efficiency and gain. The test amplifier with GaN-on-Si high 
      electron mobility transistors (HEMT) NPT2018 from MACOM provides more than 17 W 
      of output power at the 62% PAE over a 1.0 GHz to 1.1 GHz frequency range. By 
      applying a proposed design approach, it was possible to decrease phase changes on 
      test pulses from 0.5 degrees  to 0.2 degrees  and amplitude variation from 0.8 dB to 0.2 dB 
      during the pulse width of 40 micros and 40% duty cycle.
FAU - Kuchta, Dawid
AU  - Kuchta D
AD  - Institute of Radioelectronics and Multimedia Technology, Warsaw University of 
      Technology, Nowowiejska 15/19, 00-662 Warsaw, Poland.
FAU - Gryglewski, Daniel
AU  - Gryglewski D
AD  - Institute of Radioelectronics and Multimedia Technology, Warsaw University of 
      Technology, Nowowiejska 15/19, 00-662 Warsaw, Poland.
FAU - Wojtasiak, Wojciech
AU  - Wojtasiak W
AD  - Institute of Radioelectronics and Multimedia Technology, Warsaw University of 
      Technology, Nowowiejska 15/19, 00-662 Warsaw, Poland.
LA  - eng
GR  - 1/346922/4/NCBR/2017/Polish National Centre for Research and Development/
PT  - Journal Article
DEP - 20200410
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC7231363
OTO - NOTNLM
OT  - AESA radars
OT  - GaN 5G
OT  - RF front-end
OT  - distortions
OT  - high electron mobility transistors (HEMT)
OT  - new radio
OT  - optimization
OT  - power amplifier
OT  - transmittance
COIS- The authors declare no conflict of interest.
EDAT- 2020/04/16 06:00
MHDA- 2020/04/16 06:01
PMCR- 2020/04/10
CRDT- 2020/04/16 06:00
PHST- 2020/02/29 00:00 [received]
PHST- 2020/04/09 00:00 [revised]
PHST- 2020/04/10 00:00 [accepted]
PHST- 2020/04/16 06:00 [entrez]
PHST- 2020/04/16 06:00 [pubmed]
PHST- 2020/04/16 06:01 [medline]
PHST- 2020/04/10 00:00 [pmc-release]
AID - mi11040398 [pii]
AID - micromachines-11-00398 [pii]
AID - 10.3390/mi11040398 [doi]
PST - epublish
SO  - Micromachines (Basel). 2020 Apr 10;11(4):398. doi: 10.3390/mi11040398.