PMID- 32326106
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200928
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 10
IP  - 4
DP  - 2020 Apr 20
TI  - Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around 
      Nano-Transistors.
LID - 10.3390/nano10040793 [doi]
LID - 793
AB  - Stacked SiGe/Si structures are widely used as the units for gate-all-around 
      nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field 
      effective transistors (FinFETs) technologies in near future. These structures 
      deal with a several challenges brought by the shrinking of device dimensions. The 
      preparation of inner spacers is one of the most critical processes for GAA 
      nano-scale transistors. This study focuses on two key processes: inner spacer 
      film conformal deposition and accurate etching. The results show that low 
      pressure chemical vapor deposition (LPCVD) silicon nitride has a good film 
      filling effect; a precise and controllable silicon nitride inner spacer structure 
      is prepared by using an inductively coupled plasma (ICP) tool and a new gas 
      mixtures of CH(2)F(2)/CH(4)/O(2)/Ar. Silicon nitride inner spacer etch has a high 
      etch selectivity ratio, exceeding 100:1 to Si and more than 30:1 to SiO(2). High 
      anisotropy with an excellent vertical/lateral etch ratio exceeding 80:1 is 
      successfully demonstrated. It also provides a solution to the key process 
      challenges of nano-transistors beyond 5 nm node.
FAU - Li, Junjie
AU  - Li J
AUID- ORCID: 0000-0001-5191-7992
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
AD  - Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 
      100049, China.
FAU - Li, Yongliang
AU  - Li Y
AUID- ORCID: 0000-0002-5590-861X
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Zhou, Na
AU  - Zhou N
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Xiong, Wenjuan
AU  - Xiong W
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
AD  - Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 
      100049, China.
FAU - Wang, Guilei
AU  - Wang G
AUID- ORCID: 0000-0002-1311-8863
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
AD  - Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 
      100049, China.
FAU - Zhang, Qingzhu
AU  - Zhang Q
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
AD  - State Key Laboratory of Advanced Materials for Smart Sensing, General Research 
      Institute for Nonferrous Metals, Beijing 100088, China.
FAU - Du, Anyan
AU  - Du A
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Gao, Jianfeng
AU  - Gao J
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Kong, Zhenzhen
AU  - Kong Z
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Lin, Hongxiao
AU  - Lin H
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Xiang, Jinjuan
AU  - Xiang J
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Li, Chen
AU  - Li C
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
AD  - Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 
      100049, China.
FAU - Yin, Xiaogen
AU  - Yin X
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
AD  - Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 
      100049, China.
FAU - Wang, Xiaolei
AU  - Wang X
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Yang, Hong
AU  - Yang H
AUID- ORCID: 0000-0003-2860-5901
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Ma, Xueli
AU  - Ma X
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Han, Jianghao
AU  - Han J
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Zhang, Jing
AU  - Zhang J
AD  - College of Electronic and Information Engineering, North China University of 
      Technology, Beijing 100144, China.
FAU - Hu, Tairan
AU  - Hu T
AD  - College of Electronic and Information Engineering, North China University of 
      Technology, Beijing 100144, China.
FAU - Cao, Zhe
AU  - Cao Z
AD  - College of Electronic and Information Engineering, North China University of 
      Technology, Beijing 100144, China.
FAU - Yang, Tao
AU  - Yang T
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Li, Junfeng
AU  - Li J
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
FAU - Yin, Huaxiang
AU  - Yin H
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
AD  - Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 
      100049, China.
FAU - Zhu, Huilong
AU  - Zhu H
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
AD  - Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 
      100049, China.
FAU - Luo, Jun
AU  - Luo J
AUID- ORCID: 0000-0002-5122-6806
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
AD  - Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 
      100049, China.
FAU - Wang, Wenwu
AU  - Wang W
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
AD  - Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 
      100049, China.
FAU - Radamson, Henry H
AU  - Radamson HH
AD  - Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of 
      Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
AD  - Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 
      100049, China.
AD  - Department of Electronics Design, Mid Sweden University, Holmgatan 10, 85170 
      Sundsvall, Sweden.
LA  - eng
GR  - Y9XDC2X001/advanced C project pre-research of Chinese Academy of Sciences: 3~1 nm 
      integrated circuit advanced process/
GR  - without Number/CAS Pioneer Hundred Talents Program/
GR  - Z191100010618005/the technology planning project of Beijing/
GR  - Z201100004220001/the technology planning project of Beijing/
GR  - 2017ZX02315001-002/the National Key Project of Science and Technology of China/
GR  - 2016YFA0301701/the National Key Research and Development Program of China/
PT  - Journal Article
DEP - 20200420
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC7221596
OTO - NOTNLM
OT  - field effect transistor
OT  - gate-all-around (GAA)
OT  - high anisotropy
OT  - high etch selectivity
OT  - inner spacer
OT  - nanosheet
OT  - nanostructure manufacture
OT  - nanowire
COIS- The authors declare no conflict of interest.
EDAT- 2020/04/25 06:00
MHDA- 2020/04/25 06:01
PMCR- 2020/04/20
CRDT- 2020/04/25 06:00
PHST- 2020/03/11 00:00 [received]
PHST- 2020/04/15 00:00 [revised]
PHST- 2020/04/17 00:00 [accepted]
PHST- 2020/04/25 06:00 [entrez]
PHST- 2020/04/25 06:00 [pubmed]
PHST- 2020/04/25 06:01 [medline]
PHST- 2020/04/20 00:00 [pmc-release]
AID - nano10040793 [pii]
AID - nanomaterials-10-00793 [pii]
AID - 10.3390/nano10040793 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2020 Apr 20;10(4):793. doi: 10.3390/nano10040793.