PMID- 32329484
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200828
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 12
IP  - 33
DP  - 2020 Sep 7
TI  - Enhanced carrier transport by transition metal doping in WS(2) field effect 
      transistors.
PG  - 17253-17264
LID - 10.1039/d0nr01573c [doi]
AB  - High contact resistance is one of the primary concerns for electronic device 
      applications of two-dimensional (2D) layered semiconductors. Here, we explore the 
      enhanced carrier transport through metal-semiconductor interfaces in WS(2) field 
      effect transistors (FETs) by introducing a typical transition metal, Cu, with two 
      different doping strategies: (i) a "generalized" Cu doping by using randomly 
      distributed Cu atoms along the channel and (ii) a "localized" Cu doping by 
      adapting an ultrathin Cu layer at the metal-semiconductor interface. Compared to 
      the pristine WS(2) FETs, both the generalized Cu atomic dopant and localized Cu 
      contact decoration can provide a Schottky-to-Ohmic contact transition owing to 
      the reduced contact resistances by 1-3 orders of magnitude, and consequently 
      elevate electron mobilities by 5-7 times. Our work demonstrates that the 
      introduction of transition metal can be an efficient and reliable technique to 
      enhance the carrier transport and device performance in 2D TMD FETs.
FAU - Liu, Maomao
AU  - Liu M
AD  - Department of Electrical Engineering, University at Buffalo, The State University 
      of New York, Buffalo, NY 14260, USA. huaminli@buffalo.edu.
FAU - Wei, Sichen
AU  - Wei S
FAU - Shahi, Simran
AU  - Shahi S
FAU - Jaiswal, Hemendra Nath
AU  - Jaiswal HN
FAU - Paletti, Paolo
AU  - Paletti P
FAU - Fathipour, Sara
AU  - Fathipour S
FAU - Remskar, Maja
AU  - Remskar M
FAU - Jiao, Jun
AU  - Jiao J
FAU - Hwang, Wansik
AU  - Hwang W
FAU - Yao, Fei
AU  - Yao F
FAU - Li, Huamin
AU  - Li H
LA  - eng
PT  - Journal Article
DEP - 20200424
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
SB  - IM
EDAT- 2020/04/25 06:00
MHDA- 2020/04/25 06:01
CRDT- 2020/04/25 06:00
PHST- 2020/04/25 06:00 [pubmed]
PHST- 2020/04/25 06:01 [medline]
PHST- 2020/04/25 06:00 [entrez]
AID - 10.1039/d0nr01573c [doi]
PST - ppublish
SO  - Nanoscale. 2020 Sep 7;12(33):17253-17264. doi: 10.1039/d0nr01573c. Epub 2020 Apr 
      24.