PMID- 32357357
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200706
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 31
IP  - 35
DP  - 2020 Aug 28
TI  - Enhanced performance of In(2)O(3) nanowire field effect transistors with 
      controllable surface functionalization of Ag nanoparticles.
PG  - 355703
LID - 10.1088/1361-6528/ab8f4a [doi]
AB  - Indium oxide (In(2)O(3)) nanowire field effect transistors (FETs) have great 
      potential in electronic and sensor applications owing to their suitable band 
      width and high electron mobility. However, the In(2)O(3) nanowire FETs reported 
      previously were operated in a depletion-mode, not suitable to the integrated 
      circuits result of the high-power consumption. Therefore, tuning the electrical 
      properties of In(2)O(3) nanowire FETs into enhancement-mode is critical for the 
      successful application in the fields of high-performance electronics, 
      optoelectronics and detectors. In the work, a simple but effective strategy was 
      carried out by preparing Ag nanoparticle functionalized In(2)O(3) NWs to regulate 
      the threshold voltage (V(th)) of In(2)O(3) NW FETs, successfully achieving 
      enhanced-mode devices. The threshold voltage can be regulated from -6.9 V to +7 V 
      by controlling Ag density via deposition time. In addition, the devices exhibited 
      high performance: huge I(on)/I(off) ratio > 10(8), large maximum saturation 
      current  approximately  800 mA and excellent carrier mobility  approximately  129 cm(2) Vcs(-1). The enhanced 
      performance is attributed to the surface passivation by Ag nanoparticles to 
      reduce the density of traps and the charge transfer between traps and the 
      nanowires to regulate the V(th). The result indicates the application of metal 
      nanoparticles significantly improve oxide NW for low-power FETs.
FAU - Wu, Liming
AU  - Wu L
AD  - Hubei Key Laboratory for High-efficiency Utilization of Solar Energy and 
      Operation Control of Energy Storage System, Hubei University of Technology, Wuhan 
      430068, People's Republic of China. School of Electrical & Electronic 
      Engineering, Hubei University of Technology, Wuhan 430068, People's Republic of 
      China.
FAU - Xu, Jinxia
AU  - Xu J
FAU - Li, Qiliang
AU  - Li Q
FAU - Fan, Zhicheng
AU  - Fan Z
FAU - Mei, Fei
AU  - Mei F
FAU - Zhou, Yuanming
AU  - Zhou Y
FAU - Yan, Jiang
AU  - Yan J
FAU - Chen, Ying
AU  - Chen Y
LA  - eng
PT  - Journal Article
DEP - 20200501
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
EDAT- 2020/05/02 06:00
MHDA- 2020/05/02 06:01
CRDT- 2020/05/02 06:00
PHST- 2020/05/02 06:00 [pubmed]
PHST- 2020/05/02 06:01 [medline]
PHST- 2020/05/02 06:00 [entrez]
AID - 10.1088/1361-6528/ab8f4a [doi]
PST - ppublish
SO  - Nanotechnology. 2020 Aug 28;31(35):355703. doi: 10.1088/1361-6528/ab8f4a. Epub 
      2020 May 1.