PMID- 32442982
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200716
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 31
IP  - 39
DP  - 2020 Sep 25
TI  - First-principles investigations on MXene-blue phosphorene and MXene-MoS(2) 
      transistors.
PG  - 395203
LID - 10.1088/1361-6528/ab95b4 [doi]
AB  - In the semiconductor industry, one of the most important steps in the development 
      of electronic devices is the discovery of electrode materials that are suitable 
      for ohmic contact. As a newly found type of 2D materials, MXenes have been 
      explored as materials for use in field effect transistors (FETs) with promising 
      performances, which urges for the underlying mechanisms to be understood. In this 
      work, the behaviors of the 5-10 nm device models for monolayer blue phosphorene 
      (BlueP) and MoS(2) with a MXene electrode are investigated using ab initio 
      quantum transport simulations. Firstly, the interfacial properties of BlueP and 
      MoS(2) in contact with M(3)C(2)T(2) (M = Ti, Zr, or Hf; T = F, OH, or O) MXene 
      are studied. The results show that OH and some of the F functionalized MXenes 
      form an n-type ohmic contact with BlueP or MoS(2), while the O functionalized 
      MXenes form a p-type ohmic contact with BlueP and MoS(2). Accordingly, when the 
      FET model is built with M(3)C(2)(OH)(2) electrodes, these FETs exhibit high 
      on-currents due to the ohmic contacts with subthreshold swing between 100  approximately  200 
      mV/decade, and high on/off ratios up to 10(6) at a bias voltage of 0.5 V. Our 
      results imply that a FET with a sub-10 nm channel length can satisfy the 
      requirements of both high performance and low power logic applications. The 
      results from this study indicate that MXenes may act as the appropriate electrode 
      for high-performance BlueP and MoS(2) FETs, which may provide new clues to guide 
      the application of various 2D materials in electronics.
FAU - Zhou, Yuhong
AU  - Zhou Y
AD  - School of Electronics and Information Engineering, Ningbo University of 
      Technology, Ningbo 315201 People's Republic of China.
FAU - Zhuge, Xia
AU  - Zhuge X
FAU - An, Peng
AU  - An P
FAU - Du, Shiyu
AU  - Du S
LA  - eng
PT  - Journal Article
DEP - 20200522
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
EDAT- 2020/05/23 06:00
MHDA- 2020/05/23 06:01
CRDT- 2020/05/23 06:00
PHST- 2020/05/23 06:00 [pubmed]
PHST- 2020/05/23 06:01 [medline]
PHST- 2020/05/23 06:00 [entrez]
AID - 10.1088/1361-6528/ab95b4 [doi]
PST - ppublish
SO  - Nanotechnology. 2020 Sep 25;31(39):395203. doi: 10.1088/1361-6528/ab95b4. Epub 
      2020 May 22.