PMID- 32481624
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200928
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 10
IP  - 6
DP  - 2020 May 28
TI  - Measurement of Quantum Yields of Monolayer TMDs Using Dye-Dispersed PMMA Thin 
      Films.
LID - 10.3390/nano10061032 [doi]
LID - 1032
AB  - In general, the quantum yields (QYs) of monolayer transition metal 
      dichalcogenides (1L-TMDs) are low, typically less than 1% in their pristine 
      state, significantly limiting their photonic applications. Many methods have been 
      reported to increase the QYs of 1L-TMDs; however, the technical difficulties 
      involved in the reliable estimation of these QYs have prevented the general 
      assessment of these methods. Herein, we demonstrate the estimation of the QYs of 
      1L-TMDs using a poly methyl methacrylate (PMMA) thin film embedded with rhodamine 
      6G (R6G) as a reference specimen for measuring the QYs of 1L-TMDs. The PMMA/R6G 
      composite films with thicknesses of 80 and 300 nm demonstrated spatially 
      homogeneous emissions with the incorporation of well-dispersed R6G molecules, and 
      may, therefore, be used as ideal reference specimens for the QY measurement of 
      1L-TMDs. Using our reference specimens, for which the QY ranged from 5.4% to 
      22.2% depending on the film thickness and R6G concentrations, we measured the QYs 
      of the exfoliated or chemical vapor deposition (CVD)-grown 1L-WS(2), -MoSe(2), 
      -MoS(2), and -WSe(2) TMDs. The convenient procedure proposed in this study for 
      preparing the thin reference films and the simple protocol for the QY estimation 
      of 1L-TMDs may enable accurate comparisons of the absolute QYs between the 1L-TMD 
      samples, thereby enabling the development of a method to improve the QY of 
      1L-TMDs.
FAU - Roy, Shrawan
AU  - Roy S
AD  - Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea.
FAU - Sharbirin, Anir S
AU  - Sharbirin AS
AD  - Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea.
FAU - Lee, Yongjun
AU  - Lee Y
AD  - Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea.
FAU - Kim, Won Bin
AU  - Kim WB
AD  - School of Advanced Materials Science & Engineering, Sungkyunkwan University, 
      Suwon 16419, Korea.
FAU - Kim, Tae Soo
AU  - Kim TS
AD  - Department of Materials Science and Engineering, Korea Advanced Institute of 
      Science and Technology (KAIST), Daejeon 34141, Korea.
FAU - Cho, Kiwon
AU  - Cho K
AD  - Department of Materials Science and Engineering, Korea Advanced Institute of 
      Science and Technology (KAIST), Daejeon 34141, Korea.
FAU - Kang, Kibum
AU  - Kang K
AD  - Department of Materials Science and Engineering, Korea Advanced Institute of 
      Science and Technology (KAIST), Daejeon 34141, Korea.
FAU - Jung, Hyun Suk
AU  - Jung HS
AD  - School of Advanced Materials Science & Engineering, Sungkyunkwan University, 
      Suwon 16419, Korea.
FAU - Kim, Jeongyong
AU  - Kim J
AD  - Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea.
LA  - eng
GR  - NRF-2019R1I1A1A01062630, NRF-2018R1C1B6008176/National Research Foundation of 
      Korea/
GR  - SRFC-MA1802-02/Samsung Research Funding & Incubation Center of Samsung 
      Electronics/
PT  - Journal Article
DEP - 20200528
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC7353022
OTO - NOTNLM
OT  - 2D semiconductors
OT  - molybdenum diselenide
OT  - molybdenum disulfide
OT  - photoluminescence
OT  - quantum yield
OT  - tungsten diselenide
OT  - tungsten disulfide
COIS- The authors declare no competing financial interests.
EDAT- 2020/06/03 06:00
MHDA- 2020/06/03 06:01
PMCR- 2020/05/28
CRDT- 2020/06/03 06:00
PHST- 2020/04/17 00:00 [received]
PHST- 2020/05/19 00:00 [revised]
PHST- 2020/05/25 00:00 [accepted]
PHST- 2020/06/03 06:00 [entrez]
PHST- 2020/06/03 06:00 [pubmed]
PHST- 2020/06/03 06:01 [medline]
PHST- 2020/05/28 00:00 [pmc-release]
AID - nano10061032 [pii]
AID - nanomaterials-10-01032 [pii]
AID - 10.3390/nano10061032 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2020 May 28;10(6):1032. doi: 10.3390/nano10061032.