PMID- 32510476
OWN - NLM
STAT- MEDLINE
DCOM- 20201005
LR  - 20201005
IS  - 1940-087X (Electronic)
IS  - 1940-087X (Linking)
IP  - 159
DP  - 2020 May 24
TI  - The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of 
      Thin-Film Transistors.
LID - 10.3791/60798 [doi]
AB  - Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric 
      constant insulating material that is particularly appropriate for use as the 
      dielectric layer of thin-film transistors (TFTs). Growth of aluminum-oxide layers 
      from anodization of metallic aluminum films is greatly advantageous when compared 
      to sophisticated processes such as atomic layer deposition (ALD) or deposition 
      methods that demand relatively high temperatures (above 300  degrees C) such as aqueous 
      combustion or spray-pyrolysis. However, the electrical properties of the 
      transistors are highly dependent on the presence of defects and localized states 
      at the semiconductor/dielectric interface, which are strongly affected by the 
      manufacturing parameters of the anodized dielectric layer. To determine how 
      several fabrication parameters influence the device performance without 
      performing all possible combination of factors, we used a reduced factorial 
      analysis based on a Plackett-Burman design of experiments (DOE). The choice of 
      this DOE permits the use of only 12 experimental runs of combinations of factors 
      (instead of all 256 possibilities) to obtain the optimized device performance. 
      The ranking of the factors by the effect on device responses such as the TFT 
      mobility is possible by applying analysis of variance (ANOVA) to the obtained 
      results.
FAU - Gomes, Tiago C
AU  - Gomes TC
AD  - School of Technology and Sciences, Sao Paulo State University - UNESP.
FAU - Kumar, Dinesh
AU  - Kumar D
AD  - Scholl of Electronic Engineering, Bangor University.
FAU - Alves, Neri
AU  - Alves N
AD  - School of Technology and Sciences, Sao Paulo State University - UNESP.
FAU - Kettle, Jeff
AU  - Kettle J
AD  - Scholl of Electronic Engineering, Bangor University.
FAU - Fugikawa-Santos, Lucas
AU  - Fugikawa-Santos L
AD  - Institute of Geosciences and Exact Sciences, Sao Paulo State University - UNESP; 
      lucas.fugikawa@unesp.br.
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PT  - Video-Audio Media
DEP - 20200524
PL  - United States
TA  - J Vis Exp
JT  - Journal of visualized experiments : JoVE
JID - 101313252
RN  - LMI26O6933 (Aluminum Oxide)
SB  - IM
MH  - Aluminum Oxide/*chemistry
MH  - *Electric Conductivity
MH  - *Electrodes
MH  - Equipment Design
MH  - *Transistors, Electronic
EDAT- 2020/06/09 06:00
MHDA- 2020/10/06 06:00
CRDT- 2020/06/09 06:00
PHST- 2020/06/09 06:00 [entrez]
PHST- 2020/06/09 06:00 [pubmed]
PHST- 2020/10/06 06:00 [medline]
AID - 10.3791/60798 [doi]
PST - epublish
SO  - J Vis Exp. 2020 May 24;(159). doi: 10.3791/60798.