PMID- 32614014 OWN - NLM STAT- PubMed-not-MEDLINE LR - 20200716 IS - 2040-3372 (Electronic) IS - 2040-3364 (Linking) VI - 12 IP - 27 DP - 2020 Jul 21 TI - Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe(2). PG - 14636-14641 LID - 10.1039/d0nr03001e [doi] AB - High contact resistance (R(c)) limits the ultimate potential of two-dimensional (2-D) materials for future devices. To resolve the R(c) problem, forming metallic 1T phase MoS(2) locally in the semiconducting 2H phase MoS(2) has been successfully demonstrated to use the 1T phase as source/drain electrodes in field effect transistors (FETs). However, the long-term stability of the 1T phase MoS(2) still remains as an issue. Recently, an unusual thickness-modulated phase transition from semiconducting to metallic has been experimentally observed in 2-D material PtSe(2). Metallic multilayer PtSe(2) and semiconducting monolayer PtSe(2) can be used as source/drain electrodes and channel, respectively, in FETs. Here, we present a theoretical study on the intrinsic lower limit of R(c) in the metallic-semiconducting PtSe(2) heterostructure through density functional theory (DFT) combined with non-equilibrium Green's function (NEGF). Compared with R(c) in the 1T-2H MoS(2) heterostructure, the multilayer-monolayer PtSe(2) heterostructure can offer much lower R(c) due to the better capability of providing more transmission modes. FAU - Yang, Eunyeong AU - Yang E AD - Department of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea. jiwon.chang@unist.ac.kr. FAU - Seo, Jae Eun AU - Seo JE FAU - Seo, Dongwook AU - Seo D FAU - Chang, Jiwon AU - Chang J LA - eng PT - Journal Article DEP - 20200702 PL - England TA - Nanoscale JT - Nanoscale JID - 101525249 SB - IM EDAT- 2020/07/03 06:00 MHDA- 2020/07/03 06:01 CRDT- 2020/07/03 06:00 PHST- 2020/07/03 06:00 [pubmed] PHST- 2020/07/03 06:01 [medline] PHST- 2020/07/03 06:00 [entrez] AID - 10.1039/d0nr03001e [doi] PST - ppublish SO - Nanoscale. 2020 Jul 21;12(27):14636-14641. doi: 10.1039/d0nr03001e. Epub 2020 Jul 2.