PMID- 32615548
OWN - NLM
STAT- Publisher
LR  - 20240227
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 31
IP  - 42
DP  - 2020 Jul 2
TI  - GaN nanowires grown by halide chemical vapour deposition as photoanodes for 
      photo-electrochemical water oxidation reactions.
PG  - 425405
LID - 10.1088/1361-6528/aba211 [doi]
AB  - Manifold morphologies of GaN nanowires (NWs) were fabricated using halide 
      chemical vapour deposition (HCVD) on an n-Si (111) substrate and demonstrated to 
      be a promising photoelectrode for photo-electrochemical (PEC) water splitting 
      applications. We report a substantial enhancement in the photocurrent for 
      vertically-grown GaN NWs on a buffer layer as compared to other counterparts such 
      as GaN whiskers, tapered nanostructures and thin films. GaN NWs grown on Si have 
      advantages due to the absorption of photons in a wide spectral range from 
      ultraviolet to infrared and thus are directly involved in PEC reactions. A GaN NW 
      photoanode was demonstrated with a saturation photocurrent density of 0.55 mA 
      cm(-2) under 1 sun of illumination, which is much greater than its counterparts. 
      The role of the buffer layer and the carrier density on the PEC performance of 
      vertically-grown GaN NW photoanodes is further elucidated. Photo-electrochemical 
      impedance spectroscopy and Mott-Schottky characterizations were employed to 
      further explain the PEC performance of GaN NW embedded photoanodes. Here, 
      photoanodes based on diverse GaN nanostructures were examined for a better PEC 
      evaluation in order to support the conclusion. The results may pave the way for 
      the fabrication of efficient photoelectrodes and GaN as a protective layer 
      against corrosion for improved photo-stability in an NaOH electrolyte for 
      enhancing the efficiency of water splitting.
FAU - Anbarasan, N
AU  - Anbarasan N
AD  - Centre for Nanoscience and Nanotechnology, Department of Physics, Bharathidasan 
      University, Tiruchirappalli 620 024, India.
FAU - Sadhasivam, S
AU  - Sadhasivam S
FAU - Mukilan, M
AU  - Mukilan M
FAU - Jeganathan, K
AU  - Jeganathan K
LA  - eng
PT  - Journal Article
DEP - 20200702
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
EDAT- 2020/07/03 06:00
MHDA- 2020/07/03 06:00
CRDT- 2020/07/03 06:00
PHST- 2020/07/03 06:00 [pubmed]
PHST- 2020/07/03 06:00 [medline]
PHST- 2020/07/03 06:00 [entrez]
AID - 10.1088/1361-6528/aba211 [doi]
PST - aheadofprint
SO  - Nanotechnology. 2020 Jul 2;31(42):425405. doi: 10.1088/1361-6528/aba211.