PMID- 32694529
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210721
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 10
IP  - 1
DP  - 2020 Jul 21
TI  - SiN(x)/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures 
      studied by modulation spectroscopy.
PG  - 12099
LID - 10.1038/s41598-020-68963-7 [doi]
LID - 12099
AB  - Contactless electroreflectance studies coupled with numerical calculations are 
      performed on in-situ SiN(x) capped N-polar III-nitride high electron mobility 
      transistor (HEMT) structures with a scaled channel thickness in order to analyse 
      the built-in electric field in the GaN channel layer. The experimentally obtained 
      field values are compared with the calculated field versus channel thickness 
      curves. Furthermore, the experimental and theoretical sheet carrier densities, 
      n(s), are evaluated. While a gradual decrease in carrier concentration with 
      decreasing channel thickness is expected for N-polar structures, experimentally a 
      sudden drop in the ns values is observed for samples with very thin channels. The 
      additional loss in charge was associated with a change in the SiN(x)/AlGaN 
      interface Fermi level at very thin channel thicknesses.
FAU - Janicki, L
AU  - Janicki L
AD  - Department of Semiconductor Materials Engineering, Wroclaw University of Science 
      and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland. 
      lukasz.janicki@pwr.edu.pl.
FAU - Li, H
AU  - Li H
AD  - Department of Electrical and Computer Engineering, University of California, 
      Santa Barbara, CA, 93106, USA.
FAU - Keller, S
AU  - Keller S
AD  - Department of Electrical and Computer Engineering, University of California, 
      Santa Barbara, CA, 93106, USA.
FAU - Mishra, U K
AU  - Mishra UK
AD  - Department of Electrical and Computer Engineering, University of California, 
      Santa Barbara, CA, 93106, USA.
FAU - Kudrawiec, R
AU  - Kudrawiec R
AD  - Department of Semiconductor Materials Engineering, Wroclaw University of Science 
      and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.
LA  - eng
GR  - 2016/21/B/ST7/01274/Narodowe Centrum Nauki/
PT  - Journal Article
DEP - 20200721
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
SB  - IM
PMC - PMC7374109
COIS- The authors declare no competing interests.
EDAT- 2020/07/23 06:00
MHDA- 2020/07/23 06:01
PMCR- 2020/07/21
CRDT- 2020/07/23 06:00
PHST- 2020/01/14 00:00 [received]
PHST- 2020/06/26 00:00 [accepted]
PHST- 2020/07/23 06:00 [entrez]
PHST- 2020/07/23 06:00 [pubmed]
PHST- 2020/07/23 06:01 [medline]
PHST- 2020/07/21 00:00 [pmc-release]
AID - 10.1038/s41598-020-68963-7 [pii]
AID - 68963 [pii]
AID - 10.1038/s41598-020-68963-7 [doi]
PST - epublish
SO  - Sci Rep. 2020 Jul 21;10(1):12099. doi: 10.1038/s41598-020-68963-7.