PMID- 32816452
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200924
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 14
IP  - 9
DP  - 2020 Sep 22
TI  - Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in 
      Two-Dimensional WSe(2)/MoTe(2) Stack Channel.
PG  - 12064-12071
LID - 10.1021/acsnano.0c05393 [doi]
AB  - Very recently, stacked two-dimensional materials have been studied, focusing on 
      the van der Waals interaction at their stack junction interface. Here, we report 
      field effect transistors (FETs) with stacked transition metal dichalcogenide 
      (TMD) channels, where the heterojunction interface between two TMDs appears 
      useful for nonvolatile or neuromorphic memory FETs. A few nanometer-thin WSe(2) 
      and MoTe(2) flakes are vertically stacked on the gate dielectric, and bottom 
      p-MoTe(2) performs as a channel for hole transport. Interestingly, the 
      WSe(2)/MoTe(2) stack interface functions as a hole trapping site where traps 
      behave in a nonvolatile manner, although trapping/detrapping can be controlled by 
      gate voltage (V(GS)). Memory retention after high V(GS) pulse appears longer than 
      10000 s, and the Program/Erase ratio in a drain current is higher than 200. 
      Moreover, the traps are delicately controllable even with small V(GS), which 
      indicates that a neuromorphic memory is also possible with our heterojunction 
      stack FETs. Our stack channel FET demonstrates neuromorphic memory behavior of 
       approximately 94% recognition accuracy.
FAU - Park, Sam
AU  - Park S
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Jeong, Yeonsu
AU  - Jeong Y
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Jin, Hye-Jin
AU  - Jin HJ
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Park, Junkyu
AU  - Park J
AD  - The school of Electrical Engineering, Korea Advanced Institute of Science and 
      Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
FAU - Jang, Hyenam
AU  - Jang H
AD  - The school of Electrical Engineering, Korea Advanced Institute of Science and 
      Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
FAU - Lee, Sol
AU  - Lee S
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Huh, Woong
AU  - Huh W
AD  - KU-KIST Graduate School of Converging Science and Technology, Korea University, 
      145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
FAU - Cho, Hyunmin
AU  - Cho H
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Shin, Hyung Gon
AU  - Shin HG
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Kim, Kwanpyo
AU  - Kim K
AUID- ORCID: 0000-0001-8497-2330
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Lee, Chul-Ho
AU  - Lee CH
AUID- ORCID: 0000-0003-1570-8688
AD  - KU-KIST Graduate School of Converging Science and Technology, Korea University, 
      145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
FAU - Choi, Shinhyun
AU  - Choi S
AD  - The school of Electrical Engineering, Korea Advanced Institute of Science and 
      Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
FAU - Im, Seongil
AU  - Im S
AUID- ORCID: 0000-0003-0723-5075
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
LA  - eng
PT  - Journal Article
DEP - 20200825
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
SB  - IM
OTO - NOTNLM
OT  - WSe2/MoTe2 heterojunction
OT  - interface traps
OT  - neuromorphic device
OT  - nonvolatile memory
OT  - stack channel FET
EDAT- 2020/08/21 06:00
MHDA- 2020/08/21 06:01
CRDT- 2020/08/21 06:00
PHST- 2020/08/21 06:00 [pubmed]
PHST- 2020/08/21 06:01 [medline]
PHST- 2020/08/21 06:00 [entrez]
AID - 10.1021/acsnano.0c05393 [doi]
PST - ppublish
SO  - ACS Nano. 2020 Sep 22;14(9):12064-12071. doi: 10.1021/acsnano.0c05393. Epub 2020 
      Aug 25.