PMID- 32846476
OWN - NLM
STAT- MEDLINE
DCOM- 20210222
LR  - 20210222
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 12
IP  - 34
DP  - 2020 Aug 26
TI  - Highly Stable Artificial Synapse Consisting of Low-Surface Defect van der Waals 
      and Self-Assembled Materials.
PG  - 38299-38305
LID - 10.1021/acsami.0c07394 [doi]
AB  - The long-term plasticity of biological synapses was successfully emulated in an 
      artificial synapse fabricated by combining low-surface defect van der Waals (vdW) 
      and self-assembled (SA) materials. The synaptic operation could be achieved by 
      facilitating hole trapping and releasing only via the amine (NH(2)) functional 
      groups in 3-aminopropyltriethoxysilane, which consequently induced a gradual 
      conductance change in the WSe(2) channel. The vdW-SA synaptic device exhibited 
      extremely stable long-term potentiation/depression (LTP/LTD) characteristics; its 
      dynamic range and nonlinearity reproduced near 100 and 3.13/-6.53 (for LTP/LTD) 
      with relative standard deviations (RSDs) below 2%. Furthermore, after conducting 
      training and recognition tasks for the Modified National Institute of Standard 
      and Technology (MNIST) digit patterns, we verified that the maximum recognition 
      rate was 78.3%, and especially, its RSD was as low as 0.32% over several 
      training/recognition cycles. This study provides a background for future research 
      on advanced artificial synapses based on vdW and organic materials.
FAU - Oh, Seyong
AU  - Oh S
AD  - Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 
      16419, South Korea.
FAU - Jung, Sooyoung
AU  - Jung S
AD  - Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 
      16419, South Korea.
FAU - Ali, Muhammad Hasnain
AU  - Ali MH
AD  - Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 
      16419, South Korea.
FAU - Kim, Jeong-Hoon
AU  - Kim JH
AD  - Electrical and Computer Engineering Department, University of California San 
      Diego, San Diego, California 92093, United States.
FAU - Kim, Hyeongjun
AU  - Kim H
AD  - Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 
      16419, South Korea.
FAU - Park, Jin-Hong
AU  - Park JH
AUID- ORCID: 0000-0001-8401-6920
AD  - Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 
      16419, South Korea.
AD  - Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan 
      University, Suwon 16419, South Korea.
LA  - eng
PT  - Journal Article
DEP - 20200812
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
RN  - 0 (Boron Compounds)
RN  - 0 (Propylamines)
RN  - 0 (Silanes)
RN  - 0 (Tungsten Compounds)
RN  - 2U4T60A6YD (boron nitride)
RN  - L8S6UBW552 (amino-propyl-triethoxysilane)
SB  - IM
MH  - *Artificial Organs
MH  - Boron Compounds/chemistry
MH  - Long-Term Potentiation
MH  - Propylamines/chemistry
MH  - Silanes/chemistry
MH  - Synapses/physiology
MH  - Tungsten Compounds/chemistry
OTO - NOTNLM
OT  - APTES
OT  - artificial synapses
OT  - neuromorphic computing
OT  - pattern recognition
OT  - vdW materials
EDAT- 2020/08/28 06:00
MHDA- 2021/02/23 06:00
CRDT- 2020/08/28 06:00
PHST- 2020/08/28 06:00 [entrez]
PHST- 2020/08/28 06:00 [pubmed]
PHST- 2021/02/23 06:00 [medline]
AID - 10.1021/acsami.0c07394 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2020 Aug 26;12(34):38299-38305. doi: 
      10.1021/acsami.0c07394. Epub 2020 Aug 12.