PMID- 32894447
OWN - NLM
STAT- MEDLINE
DCOM- 20210128
LR  - 20210128
IS  - 1614-7499 (Electronic)
IS  - 0944-1344 (Linking)
VI  - 28
IP  - 4
DP  - 2021 Jan
TI  - Sol-gel-derived transparent metal oxide flexible field effect transistors.
PG  - 3928-3941
LID - 10.1007/s11356-020-10459-y [doi]
AB  - ZnO and ZnO:Al thin films have been successfully synthesized by simple solution 
      processable method at low temperature. Highly crystalline (002) preferentially 
      oriented, uniform, and smooth ZnO:Al thin films are produced. The electrical, J-V 
      and C-V, measurements revealed higher current flow and more carrier 
      concentration, respectively, for ZnO:Al samples compared with pristine ZnO. ZnO- 
      and ZnO:Al-based field effect transistors (FETs) were fabricated using SiO(2) and 
      TiO(2) gate dielectric layers onto flexible plastic, ITO and rigid, p-Si 
      substrates. The ZnO:Al-based FETs measured better transistor performance with 
      both SiO(2) and TiO(2) gate dielectrics as compared with ZnO-based TFTs. The 
      saturated field effect mobilities 5.78 and 4.96 cm(2)/Vs were measured for 
      ZnO:Al-based TFTs with SiO(2) and TiO(2) dielectrics, which reasonably higher 
      than 0.51 and 0.43 cm(2)/Vs, respectively, measured for pristine ZnO TFTs. The 
      effect of smooth surface and reduced grain boundaries of ZnO:Al layer contributed 
      to measure the low-interface trap density and trap density at grain boundaries. 
      The reported procedure can be applicable to produce large area transparent 
      electronics onto flexible plastic substrates.
FAU - Londhe, Priyanka
AU  - Londhe P
AD  - Department of Chemistry, Savitribai Phule Pune University (formerly University of 
      Pune), Pune, 411007, India.
FAU - Athawale, Anjali
AU  - Athawale A
AD  - Department of Chemistry, Savitribai Phule Pune University (formerly University of 
      Pune), Pune, 411007, India.
FAU - Chaure, Nandu B
AU  - Chaure NB
AUID- ORCID: 0000-0002-4134-5019
AD  - Department of Physics, Savitribai Phule Pune University (formerly University of 
      Pune), Pune, 411007, India. nchaure.uop@gmail.com.
LA  - eng
PT  - Journal Article
DEP - 20200907
PL  - Germany
TA  - Environ Sci Pollut Res Int
JT  - Environmental science and pollution research international
JID - 9441769
RN  - 0 (Oxides)
RN  - 7631-86-9 (Silicon Dioxide)
RN  - SOI2LOH54Z (Zinc Oxide)
SB  - IM
MH  - Electricity
MH  - Oxides
MH  - Silicon Dioxide
MH  - *Transistors, Electronic
MH  - *Zinc Oxide
OTO - NOTNLM
OT  - Al-doped ZnO
OT  - Electrical conductivity
OT  - Field effect transistors
OT  - Saturated mobility
EDAT- 2020/09/08 06:00
MHDA- 2021/01/29 06:00
CRDT- 2020/09/07 12:13
PHST- 2020/02/21 00:00 [received]
PHST- 2020/08/10 00:00 [accepted]
PHST- 2020/09/08 06:00 [pubmed]
PHST- 2021/01/29 06:00 [medline]
PHST- 2020/09/07 12:13 [entrez]
AID - 10.1007/s11356-020-10459-y [pii]
AID - 10.1007/s11356-020-10459-y [doi]
PST - ppublish
SO  - Environ Sci Pollut Res Int. 2021 Jan;28(4):3928-3941. doi: 
      10.1007/s11356-020-10459-y. Epub 2020 Sep 7.