PMID- 32895395 OWN - NLM STAT- PubMed-not-MEDLINE LR - 20220731 IS - 2045-2322 (Electronic) IS - 2045-2322 (Linking) VI - 10 IP - 1 DP - 2020 Sep 7 TI - Two-dimensional BN buffer for plasma enhanced atomic layer deposition of Al(2)O(3) gate dielectrics on graphene field effect transistors. PG - 14699 LID - 10.1038/s41598-020-71108-5 [doi] LID - 14699 AB - Here, we investigate the use of few-layer metal organic chemical vapor deposition (MOCVD) grown BN as a two-dimensional buffer layer for plasma enhanced atomic layer deposition (PE-ALD) of Al(2)O(3) on graphene for top gated field effect transistors (FETs). The reactive nature of PE-ALD enables deposition of thin (2 nm) dielectrics directly on graphene and other two-dimensional materials without the need for a seed or functionalization layer; however, this also leads to significant oxidation of the graphene layer as observed by Raman. In FETs, we find this oxidation destroys conductivity in the graphene channel. By transferring thin (1.6 nm) MOCVD BN layers on top of graphene channels prior to PE-ALD, the graphene is protected from oxidation enabling BN/Al(2)O(3) layers as thin as 4 nm. Raman and X-ray photoelectron spectroscopy on BN films show no significant oxidation caused by PE-ALD of Al(2)O(3). Inserting the BN layer creates an atomically abrupt interface significantly reducing interface charges between the graphene and Al(2)O(3) as compared to use of a 2 nm Al buffer layer. This results in a much smaller Dirac voltage (- 1 V) and hysteresis (0.9 V) when compared to FETs with the Al layer (V(Dirac) = - 6.1 V and hysteresis = 2.9 V). FAU - Snure, Michael AU - Snure M AD - Air Force Research Laboratory, Sensors Directorate, Wright Patterson, AFB, 45433, USA. michael.snure.1@us.af.mil. FAU - Vangala, Shivashankar R AU - Vangala SR AD - Air Force Research Laboratory, Sensors Directorate, Wright Patterson, AFB, 45433, USA. FAU - Prusnick, Timothy AU - Prusnick T AD - KBR, Beavercreek, OH, 45433, USA. FAU - Grzybowski, Gordon AU - Grzybowski G AD - KBR, Beavercreek, OH, 45433, USA. FAU - Crespo, Antonio AU - Crespo A AD - Air Force Research Laboratory, Sensors Directorate, Wright Patterson, AFB, 45433, USA. FAU - Leedy, Kevin D AU - Leedy KD AD - Air Force Research Laboratory, Sensors Directorate, Wright Patterson, AFB, 45433, USA. LA - eng GR - FA9550-19RYCOR050/Air Force Office of Scientific Research/ GR - FA9550-19RYCOR050/Air Force Office of Scientific Research/ GR - FA9550-19RYCOR050/Air Force Office of Scientific Research/ PT - Journal Article DEP - 20200907 PL - England TA - Sci Rep JT - Scientific reports JID - 101563288 SB - IM PMC - PMC7477096 COIS- The authors declare no competing interests. EDAT- 2020/09/09 06:00 MHDA- 2020/09/09 06:01 PMCR- 2020/09/07 CRDT- 2020/09/08 05:20 PHST- 2020/04/01 00:00 [received] PHST- 2020/08/05 00:00 [accepted] PHST- 2020/09/08 05:20 [entrez] PHST- 2020/09/09 06:00 [pubmed] PHST- 2020/09/09 06:01 [medline] PHST- 2020/09/07 00:00 [pmc-release] AID - 10.1038/s41598-020-71108-5 [pii] AID - 71108 [pii] AID - 10.1038/s41598-020-71108-5 [doi] PST - epublish SO - Sci Rep. 2020 Sep 7;10(1):14699. doi: 10.1038/s41598-020-71108-5.