PMID- 32931465
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200928
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 31
IP  - 48
DP  - 2020 Nov 27
TI  - Fabrication of field-effect transistors with transfer-free nanostructured carbon 
      as the semiconducting channel material.
PG  - 485203
LID - 10.1088/1361-6528/abb04a [doi]
AB  - Carbon nanostructures used as the active channel material in field effect 
      transistors (FETs) are appealing in microelectronics for their improved 
      performance, such as their high speed and low energy dissipation. However, these 
      devices require the incorporation of nanostructure transfer steps in the 
      fabrication process flow, which makes their application difficult in large scale 
      integrated circuits. Here we present a novel method for the fabrication of FETs 
      with nanostructured carbon in the channel with p-type semiconducting properties 
      and intermediate drain-source current (I(DS) ) on/off ratio. The method is based 
      on the use of Ni nanoparticles in the source-drain gap region as the seed 
      material for the formation of carbon nanostructures in the FET channel. FETs 
      without Ni nanoparticles in the channel showed no modulation of I(DS) as a 
      function of gate voltage. The device fabrication process does not require any 
      carbon nanostructure transfer steps since it directly forms carbon nanostructures 
      electrically connected to the device's source and drain electrodes via 
      electron-beam evaporation of carbon and conventional lithographic processes. 
      Since all device fabrication steps are compatible with existing Si technology 
      processes, they are capable of being further optimized following process 
      development protocols practiced by the semiconductor industry.
FAU - Xiao, Zhigang
AU  - Xiao Z
AD  - Department of Electrical Engineering and Computer Science, Alabama A&M 
      University, Normal, AL 35762, United States of America.
FAU - Williams, Lauren
AU  - Williams L
FAU - Kisslinger, Kim
AU  - Kisslinger K
FAU - Sadowski, Jerzy T
AU  - Sadowski JT
FAU - Camino, Fernando
AU  - Camino F
LA  - eng
PT  - Journal Article
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
EDAT- 2020/09/16 06:00
MHDA- 2020/09/16 06:01
CRDT- 2020/09/15 17:13
PHST- 2020/09/16 06:00 [pubmed]
PHST- 2020/09/16 06:01 [medline]
PHST- 2020/09/15 17:13 [entrez]
AID - 10.1088/1361-6528/abb04a [doi]
PST - ppublish
SO  - Nanotechnology. 2020 Nov 27;31(48):485203. doi: 10.1088/1361-6528/abb04a.