PMID- 32988057
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20201001
IS  - 1094-4087 (Electronic)
IS  - 1094-4087 (Linking)
VI  - 28
IP  - 19
DP  - 2020 Sep 14
TI  - Enhancement in the photonic response of ZnO nanorod-gated AlGaN/GaN HEMTs with 
      N2O plasma treatment.
PG  - 27688-27701
LID - 10.1364/OE.399888 [doi]
AB  - We demonstrate an improvement in the photoresponse characteristics of ultraviolet 
      (UV) photodetectors (PDs) using the N(2)O plasma-treated ZnO nanorod (NR) gated 
      AlGaN/GaN high electron mobility transistor (HEMT) structure. The PDs fabricated 
      with ZnO NRs plasma-treated for 6 min show superior performance in terms of 
      responsivity ( approximately 1.54x10 (5) A/W), specific detectivity ( approximately  4.7x10(13) 
      cm.Hz(-1/2)/W), and on/off current ratio ( approximately 40). These improved performance 
      parameters are the best among those from HEMT-based PDs reported to date. 
      Photoluminescence analysis shows a significant enhancement in near band edge 
      emission due to the effective suppression of native defects near the surface of 
      ZnO NRs after plasma treatment. As our X-ray photoelectron spectroscopy reveals a 
      very high O/Zn ratio of  approximately 0.96 from the NR samples plasma-treated for 6 min, the 
      N(2)O plasma radicals also show a clear impact on ZnO stoichiometry. From our 
      X-ray diffraction analysis, the plasma-treated ZnO NRs show much greater 
      improvement in (002) peak intensity and degree of (002) orientation ( approximately 0.996) than 
      those of as-grown NRs. This significant enhancement in (002) degree of 
      orientation and stoichiometry in ZnO nano-crystals contribute to the enhancement 
      in photoresponse characteristics of the PDs.
FAU - Khan, Fasihullah
AU  - Khan F
FAU - Ajmal, Hafiz Muhammad Salman
AU  - Ajmal HMS
FAU - Nam, Kiyun
AU  - Nam K
FAU - Kim, Sam-Dong
AU  - Kim SD
LA  - eng
PT  - Journal Article
PL  - United States
TA  - Opt Express
JT  - Optics express
JID - 101137103
SB  - IM
EDAT- 2020/09/30 06:00
MHDA- 2020/09/30 06:01
CRDT- 2020/09/29 01:03
PHST- 2020/09/29 01:03 [entrez]
PHST- 2020/09/30 06:00 [pubmed]
PHST- 2020/09/30 06:01 [medline]
AID - 437871 [pii]
AID - 10.1364/OE.399888 [doi]
PST - ppublish
SO  - Opt Express. 2020 Sep 14;28(19):27688-27701. doi: 10.1364/OE.399888.