PMID- 33126596
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20201114
IS  - 1424-8220 (Electronic)
IS  - 1424-8220 (Linking)
VI  - 20
IP  - 21
DP  - 2020 Oct 28
TI  - Improved Performance of SRAM-Based True Random Number Generator by Leveraging 
      Irradiation Exposure.
LID - 10.3390/s20216132 [doi]
LID - 6132
AB  - Encryption is an important step for secure data transmission, and a true random 
      number generator (TRNG) is a key building block in many encryption algorithms. 
      Static random-access memory (SRAM) chips can be easily available sources of true 
      random numbers, benefiting from noisy SRAM cells whose start-up values flip 
      between different power-on cycles. Embarking from this phenomenon, a novel 
      performance (i.e., randomness and throughput) improvement method of SRAM-based 
      TRNG is proposed, and its implementation can be divided into two phases: 
      irradiation exposure and hardware postprocessing. As the randomness of original 
      SRAM power-on values is fairly low, ionization irradiation is utilized to enhance 
      its randomness, and the min-entropy can increase from about 0.03 to above 0.7 in 
      the total ionizing irradiation (TID) experiments. Additionally, while the data 
      remanence effect hampers obtaining random bitstreams with high speed, the 
      ionization irradiation can also weaken this impact and improve the throughput of 
      TRNG. In the hardware postprocessing stage, Secure Hash Algorithm 256 (SHA-256) 
      is implemented on a Field Programmable Gate Array (FPGA) with clock frequency of 
      200 MHz. It can generate National Institute of Standards and Technology (NIST) SP 
      800-22 compatible true random bitstreams with throughput of 178 Mbps utilizing 
      SRAM chip with 1 Mbit memory capacity. Furthermore, according to different 
      application scenarios, the throughput can be widely scalable by adjusting clock 
      frequency and SRAM memory capacity, which makes the novel TRNG design applicable 
      for various Internet of Things (IOT) devices.
FAU - Zhang, Xu
AU  - Zhang X
AD  - Institute of Electronic Engineering, China Academy of Engineering Physics, 
      Mianyang 621999, China.
AD  - Microsystem and Terahertz Research Center, China Academy of Engineering Physics, 
      Chengdu 610200, China.
FAU - Jiang, Chunsheng
AU  - Jiang C
AD  - Institute of Electronic Engineering, China Academy of Engineering Physics, 
      Mianyang 621999, China.
AD  - Microsystem and Terahertz Research Center, China Academy of Engineering Physics, 
      Chengdu 610200, China.
FAU - Dai, Gang
AU  - Dai G
AUID- ORCID: 0000-0001-7675-5395
AD  - Institute of Electronic Engineering, China Academy of Engineering Physics, 
      Mianyang 621999, China.
AD  - Microsystem and Terahertz Research Center, China Academy of Engineering Physics, 
      Chengdu 610200, China.
FAU - Zhong, Le
AU  - Zhong L
AD  - Institute of Electronic Engineering, China Academy of Engineering Physics, 
      Mianyang 621999, China.
AD  - Microsystem and Terahertz Research Center, China Academy of Engineering Physics, 
      Chengdu 610200, China.
FAU - Fang, Wen
AU  - Fang W
AD  - Institute of Electronic Engineering, China Academy of Engineering Physics, 
      Mianyang 621999, China.
AD  - Microsystem and Terahertz Research Center, China Academy of Engineering Physics, 
      Chengdu 610200, China.
FAU - Gu, Ke
AU  - Gu K
AD  - Institute of Electronic Engineering, China Academy of Engineering Physics, 
      Mianyang 621999, China.
AD  - Microsystem and Terahertz Research Center, China Academy of Engineering Physics, 
      Chengdu 610200, China.
FAU - Xiao, Guoping
AU  - Xiao G
AD  - Institute of Electronic Engineering, China Academy of Engineering Physics, 
      Mianyang 621999, China.
AD  - Microsystem and Terahertz Research Center, China Academy of Engineering Physics, 
      Chengdu 610200, China.
FAU - Ren, Shangqing
AU  - Ren S
AD  - Institute of Electronic Engineering, China Academy of Engineering Physics, 
      Mianyang 621999, China.
AD  - Microsystem and Terahertz Research Center, China Academy of Engineering Physics, 
      Chengdu 610200, China.
FAU - Liu, Xin
AU  - Liu X
AD  - Institute of Electronic Engineering, China Academy of Engineering Physics, 
      Mianyang 621999, China.
AD  - Microsystem and Terahertz Research Center, China Academy of Engineering Physics, 
      Chengdu 610200, China.
FAU - Zou, Sanyong
AU  - Zou S
AD  - Institute of Electronic Engineering, China Academy of Engineering Physics, 
      Mianyang 621999, China.
AD  - Microsystem and Terahertz Research Center, China Academy of Engineering Physics, 
      Chengdu 610200, China.
LA  - eng
GR  - 61904164/National Natural Science Foundation of China/
PT  - Journal Article
DEP - 20201028
PL  - Switzerland
TA  - Sensors (Basel)
JT  - Sensors (Basel, Switzerland)
JID - 101204366
SB  - IM
PMC - PMC7663444
OTO - NOTNLM
OT  - SRAM-based TRNG
OT  - data remanence effect
OT  - min-entropy
OT  - throughput
OT  - total ionizing irradiation (TID)
COIS- The authors declare no conflict of interest.
EDAT- 2020/11/01 06:00
MHDA- 2020/11/01 06:01
PMCR- 2020/11/01
CRDT- 2020/10/31 01:01
PHST- 2020/09/18 00:00 [received]
PHST- 2020/10/12 00:00 [revised]
PHST- 2020/10/18 00:00 [accepted]
PHST- 2020/10/31 01:01 [entrez]
PHST- 2020/11/01 06:00 [pubmed]
PHST- 2020/11/01 06:01 [medline]
PHST- 2020/11/01 00:00 [pmc-release]
AID - s20216132 [pii]
AID - sensors-20-06132 [pii]
AID - 10.3390/s20216132 [doi]
PST - epublish
SO  - Sensors (Basel). 2020 Oct 28;20(21):6132. doi: 10.3390/s20216132.