PMID- 33237738
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20201210
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 12
IP  - 49
DP  - 2020 Dec 9
TI  - Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN.
PG  - 55460-55466
LID - 10.1021/acsami.0c16850 [doi]
AB  - Hexagonal boron nitride (h-BN) can be used as a p-doped material in wide-bandgap 
      optoelectronic heterostructures or as a release layer to allow lift-off of grown 
      three-dimensional (3D) GaN-based devices. To date, there have been no studies of 
      factors that lead to or prevent lift-off and/or spontaneous delamination of 
      layers. Here, we report a unique approach of controlling the adhesion of this 
      layered material, which can result in both desired lift-off layered h-BN and 
      mechanically inseparable robust h-BN layers. This is accomplished by controlling 
      the diffusion of Al atoms into h-BN from AlN buffers grown on h-BN/sapphire. We 
      present evidence of Al diffusion into h-BN for AlN buffers grown at high 
      temperatures compared to conventional-temperature AlN buffers. Further evidence 
      that the Al content in BN controls lift-off is provided by comparison of two 
      alloys, Al(0.03)B(0.97)N/sapphire and Al(0.17)B(0.83)N/sapphire. Moreover, we 
      tested that management of Al diffusion controls the mechanical adhesion of 
      high-electron-mobility transistor (HEMT) devices grown on AlN/h-BN/sapphire. The 
      results extend the control of two-dimensional (2D)/3D hetero-epitaxy and bring 
      h-BN closer to industrial application in optoelectronics.
FAU - Vuong, Phuong
AU  - Vuong P
AUID- ORCID: 0000-0003-2775-7081
AD  - Georgia Tech-CNRS, UMI 2958, Georgia Tech Lorraine, 57070 Metz, France.
FAU - Sundaram, Suresh
AU  - Sundaram S
AD  - Georgia Tech-CNRS, UMI 2958, Georgia Tech Lorraine, 57070 Metz, France.
AD  - School of Electrical and Computer Engineering, Georgia Institute of Technology, 
      Atlanta, Georgia 30332, United States.
FAU - Mballo, Adama
AU  - Mballo A
AD  - Georgia Tech-CNRS, UMI 2958, Georgia Tech Lorraine, 57070 Metz, France.
FAU - Patriarche, Gilles
AU  - Patriarche G
AD  - Centre de Nanosciences et de Nanotechnologies, Universite Paris-Saclay, C2N-Site 
      de Marcoussis, Route de Nozay, F-91460 Marcoussis, France.
FAU - Leone, Stefano
AU  - Leone S
AD  - Fraunhofer IAF, Fraunhofer Institute for Applied Solid State Physics, 
      Tullastrasse 72, 79108 Freiburg, Germany.
FAU - Benkhelifa, Fouad
AU  - Benkhelifa F
AD  - Fraunhofer IAF, Fraunhofer Institute for Applied Solid State Physics, 
      Tullastrasse 72, 79108 Freiburg, Germany.
FAU - Karrakchou, Soufiane
AU  - Karrakchou S
AD  - Georgia Tech-CNRS, UMI 2958, Georgia Tech Lorraine, 57070 Metz, France.
AD  - School of Electrical and Computer Engineering, Georgia Institute of Technology, 
      Atlanta, Georgia 30332, United States.
FAU - Moudakir, Tarik
AU  - Moudakir T
AD  - Institut Lafayette, 2 rue Marconi, 57070 Metz, France.
FAU - Gautier, Simon
AU  - Gautier S
AD  - Institut Lafayette, 2 rue Marconi, 57070 Metz, France.
FAU - Voss, Paul L
AU  - Voss PL
AD  - Georgia Tech-CNRS, UMI 2958, Georgia Tech Lorraine, 57070 Metz, France.
AD  - School of Electrical and Computer Engineering, Georgia Institute of Technology, 
      Atlanta, Georgia 30332, United States.
FAU - Salvestrini, Jean-Paul
AU  - Salvestrini JP
AUID- ORCID: 0000-0002-0482-1178
AD  - Georgia Tech-CNRS, UMI 2958, Georgia Tech Lorraine, 57070 Metz, France.
AD  - School of Electrical and Computer Engineering, Georgia Institute of Technology, 
      Atlanta, Georgia 30332, United States.
FAU - Ougazzaden, Abdallah
AU  - Ougazzaden A
AUID- ORCID: 0000-0002-9959-5280
AD  - Georgia Tech-CNRS, UMI 2958, Georgia Tech Lorraine, 57070 Metz, France.
AD  - School of Electrical and Computer Engineering, Georgia Institute of Technology, 
      Atlanta, Georgia 30332, United States.
LA  - eng
PT  - Journal Article
DEP - 20201125
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - 2D boron nitride
OT  - III-nitrides
OT  - flexible (opto) electronics
OT  - mechanical transfer
OT  - semiconductors
OT  - transferrable nanodevices
EDAT- 2020/11/26 06:00
MHDA- 2020/11/26 06:01
CRDT- 2020/11/25 17:24
PHST- 2020/11/26 06:00 [pubmed]
PHST- 2020/11/26 06:01 [medline]
PHST- 2020/11/25 17:24 [entrez]
AID - 10.1021/acsami.0c16850 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2020 Dec 9;12(49):55460-55466. doi: 
      10.1021/acsami.0c16850. Epub 2020 Nov 25.