PMID- 33255403
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20201226
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 10
IP  - 12
DP  - 2020 Nov 24
TI  - Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe(2) for Artificial 
      Synaptic Features.
LID - 10.3390/nano10122326 [doi]
LID - 2326
AB  - The diversity of brain functions depend on the release of neurotransmitters in 
      chemical synapses. The back gated three terminal field effect transistors (FETs) 
      are auspicious candidates for the emulation of biological functions to recognize 
      the proficient neuromorphic computing systems. In order to encourage the 
      hysteresis loops, we treated the bottom side of MoTe(2) flake with deep 
      ultraviolet light in ambient conditions. Here, we modulate the short-term and 
      long-term memory effects due to the trapping and de-trapping of electron events 
      in few layers of a MoTe(2) transistor. However, MoTe(2) FETs are investigated to 
      reveal the time constants of electron trapping/de-trapping while applying the 
      gate-voltage pulses. Our devices exploit the hysteresis effect in the transfer 
      curves of MoTe(2) FETs to explore the excitatory/inhibitory post-synaptic 
      currents (EPSC/IPSC), long-term potentiation (LTP), long-term depression (LTD), 
      spike timing/amplitude-dependent plasticity (STDP/SADP), and paired pulse 
      facilitation (PPF). Further, the time constants for potentiation and depression 
      is found to be 0.6 and 0.9 s, respectively which seems plausible for biological 
      synapses. In addition, the change of synaptic weight in MoTe(2) conductance is 
      found to be 41% at negative gate pulse and 38% for positive gate pulse, 
      respectively. Our findings can provide an essential role in the advancement of 
      smart neuromorphic electronics.
FAU - Rehman, Shania
AU  - Rehman S
AD  - Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, 
      Gwangjin-gu, Seoul 05006, Korea.
FAU - Khan, Muhammad Farooq
AU  - Khan MF
AD  - Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, 
      Gwangjin-gu, Seoul 05006, Korea.
FAU - Rahmani, Mehr Khalid
AU  - Rahmani MK
AD  - School of electronics Engineering, Chungbuk National University, Cheongju 28644, 
      Korea.
FAU - Kim, Honggyun
AU  - Kim H
AD  - Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, 
      Gwangjin-gu, Seoul 05006, Korea.
FAU - Patil, Harshada
AU  - Patil H
AD  - Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, 
      Gwangjin-gu, Seoul 05006, Korea.
AD  - Department of Convergence Engineering for Intelligent Drone, Sejong University, 
      Seoul 05006, Korea.
FAU - Khan, Sobia Ali
AU  - Khan SA
AD  - School of electronics Engineering, Chungbuk National University, Cheongju 28644, 
      Korea.
FAU - Kang, Moon Hee
AU  - Kang MH
AD  - School of electronics Engineering, Chungbuk National University, Cheongju 28644, 
      Korea.
FAU - Kim, Deok-Kee
AU  - Kim DK
AUID- ORCID: 0000-0002-2515-4984
AD  - Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, 
      Gwangjin-gu, Seoul 05006, Korea.
AD  - Department of Convergence Engineering for Intelligent Drone, Sejong University, 
      Seoul 05006, Korea.
LA  - eng
PT  - Journal Article
DEP - 20201124
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC7761516
OTO - NOTNLM
OT  - MoTe2 transistor
OT  - charge trapping and artificial synaptic
OT  - chemical synapse
OT  - neuromorphic
COIS- The authors declare no conflict of interest.
EDAT- 2020/12/02 06:00
MHDA- 2020/12/02 06:01
PMCR- 2020/11/24
CRDT- 2020/12/01 01:08
PHST- 2020/11/04 00:00 [received]
PHST- 2020/11/18 00:00 [revised]
PHST- 2020/11/21 00:00 [accepted]
PHST- 2020/12/01 01:08 [entrez]
PHST- 2020/12/02 06:00 [pubmed]
PHST- 2020/12/02 06:01 [medline]
PHST- 2020/11/24 00:00 [pmc-release]
AID - nano10122326 [pii]
AID - nanomaterials-10-02326 [pii]
AID - 10.3390/nano10122326 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2020 Nov 24;10(12):2326. doi: 10.3390/nano10122326.