PMID- 33266399
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20201207
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 13
IP  - 22
DP  - 2020 Nov 22
TI  - Low-Power pH Sensor Based on Narrow Channel Open-Gated Al(0.25)Ga(0.75)N/GaN HEMT 
      and Package Integrated Polydimethylsiloxane Microchannels.
LID - 10.3390/ma13225282 [doi]
LID - 5282
AB  - pH sensors with low-power and strong anti-interference are extremely important 
      for industrial online real-time detection. Herein, a narrow channel pH sensor 
      based on Al(0.25)Ga(0.75)N/GaN high electron mobility transistor (HEMT) with 
      package integrated Polydimethylsiloxane (PDMS) microchannels is proposed. The 
      fabricated device has shown potential advantages in improving stability and 
      reducing power consumption in response to pH changes of the solution. The 
      performance of the pH sensor was demonstrated where the preliminary results 
      showed an ultra-low power (<5.0 muW) at V(DS) = 1.0 V. Meanwhile, the sensitivity 
      was 0.06 muA/V.pH in the range of pH = 2 to pH = 10, and the resolution of the 
      sensor was 0.1 pH. The improvement in performance of the proposed sensor can be 
      related to the narrow channel and microchannel, which can be attributed to better 
      surface Ga(x)O(y) in a microchannel with larger H(+) and HO(-) concentration on 
      the sensing surface during the detection process. The low-power sensor with 
      excellent stability can be widely used in various unattended or harsh 
      environments, and it is more conducive to integration and intelligence, which 
      lays the foundation for online monitoring in vivo.
FAU - Yang, Xianghong
AU  - Yang X
AD  - School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
FAU - Ao, Jiapei
AU  - Ao J
AD  - School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
FAU - Wu, Sichen
AU  - Wu S
AD  - School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
FAU - Ma, Shenhui
AU  - Ma S
AD  - School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
FAU - Li, Xin
AU  - Li X
AD  - School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
FAU - Hu, Long
AU  - Hu L
AD  - School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
FAU - Liu, Weihua
AU  - Liu W
AUID- ORCID: 0000-0001-5748-3021
AD  - School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
FAU - Han, Chuanyu
AU  - Han C
AD  - School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
LA  - eng
GR  - 51707062/National Natural Science Foundation of China/
GR  - 61671368/National Natural Science Foundation of China/
GR  - 51625504/National Natural Science Foundation of China/
GR  - 2017C31087/Technology Planning Project of Zhejiang Province, China/
PT  - Journal Article
DEP - 20201122
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC7700280
OTO - NOTNLM
OT  - Al0.25Ga0.75N/GaN HEMT
OT  - microchannel
OT  - narrow channel
OT  - pH detection
COIS- The authors declare no conflict of interest.
EDAT- 2020/12/04 06:00
MHDA- 2020/12/04 06:01
PMCR- 2020/11/22
CRDT- 2020/12/03 01:06
PHST- 2020/10/15 00:00 [received]
PHST- 2020/11/11 00:00 [revised]
PHST- 2020/11/19 00:00 [accepted]
PHST- 2020/12/03 01:06 [entrez]
PHST- 2020/12/04 06:00 [pubmed]
PHST- 2020/12/04 06:01 [medline]
PHST- 2020/11/22 00:00 [pmc-release]
AID - ma13225282 [pii]
AID - materials-13-05282 [pii]
AID - 10.3390/ma13225282 [doi]
PST - epublish
SO  - Materials (Basel). 2020 Nov 22;13(22):5282. doi: 10.3390/ma13225282.