PMID- 33530451
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210303
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 12
IP  - 2
DP  - 2021 Jan 26
TI  - The Influence of the Different Repair Methods on the Electrical Properties of the 
      Normally off p-GaN HEMT.
LID - 10.3390/mi12020131 [doi]
LID - 131
AB  - The influence of the repair process on the electrical properties of the normally 
      off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this 
      paper. We find that the etching process will cause the two-dimensional electron 
      gas (2DEG) and the mobility of the p-GaN HEMT to decrease. However, the repair 
      process will gradually recover the electrical properties. We study different 
      repair methods and different repair conditions, propose the best repair 
      conditions, and further fabricate the p-GaN HEMTs devices. The threshold voltage 
      of the fabricated device is 1.6 V, the maximum gate voltage is 7 V, and the 
      on-resistance is 23 Omega.mm. The device has a good performance, which proves that 
      the repair conditions can be successfully applied to the fabricate of the p-GaN 
      HEMT devices.
FAU - Niu, Di
AU  - Niu D
AUID- ORCID: 0000-0002-8409-618X
AD  - Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese 
      Academy of Sciences, Beijing 100083, China.
AD  - Center of Materials Science and Optoelectronics Engineering, University of 
      Chinese Academy of Sciences, Beijing 100049, China.
AD  - School of Microelectronics, University of Chinese Academy of Sciences, Beijing 
      100049, China.
AD  - Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, 
      Beijing 100083, China.
FAU - Wang, Quan
AU  - Wang Q
AD  - Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese 
      Academy of Sciences, Beijing 100083, China.
AD  - Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, 
      Beijing 100083, China.
AD  - State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, 
      China.
FAU - Li, Wei
AU  - Li W
AD  - Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese 
      Academy of Sciences, Beijing 100083, China.
AD  - Center of Materials Science and Optoelectronics Engineering, University of 
      Chinese Academy of Sciences, Beijing 100049, China.
AD  - School of Microelectronics, University of Chinese Academy of Sciences, Beijing 
      100049, China.
AD  - Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, 
      Beijing 100083, China.
FAU - Chen, Changxi
AU  - Chen C
AD  - Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese 
      Academy of Sciences, Beijing 100083, China.
AD  - Center of Materials Science and Optoelectronics Engineering, University of 
      Chinese Academy of Sciences, Beijing 100049, China.
AD  - School of Microelectronics, University of Chinese Academy of Sciences, Beijing 
      100049, China.
AD  - Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, 
      Beijing 100083, China.
FAU - Xu, Jiankai
AU  - Xu J
AD  - Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese 
      Academy of Sciences, Beijing 100083, China.
AD  - Center of Materials Science and Optoelectronics Engineering, University of 
      Chinese Academy of Sciences, Beijing 100049, China.
AD  - School of Microelectronics, University of Chinese Academy of Sciences, Beijing 
      100049, China.
AD  - Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, 
      Beijing 100083, China.
FAU - Jiang, Lijuan
AU  - Jiang L
AD  - Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese 
      Academy of Sciences, Beijing 100083, China.
AD  - Center of Materials Science and Optoelectronics Engineering, University of 
      Chinese Academy of Sciences, Beijing 100049, China.
AD  - School of Microelectronics, University of Chinese Academy of Sciences, Beijing 
      100049, China.
AD  - Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, 
      Beijing 100083, China.
FAU - Feng, Chun
AU  - Feng C
AD  - Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese 
      Academy of Sciences, Beijing 100083, China.
AD  - Center of Materials Science and Optoelectronics Engineering, University of 
      Chinese Academy of Sciences, Beijing 100049, China.
AD  - School of Microelectronics, University of Chinese Academy of Sciences, Beijing 
      100049, China.
AD  - Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, 
      Beijing 100083, China.
FAU - Xiao, Hongling
AU  - Xiao H
AD  - Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese 
      Academy of Sciences, Beijing 100083, China.
AD  - Center of Materials Science and Optoelectronics Engineering, University of 
      Chinese Academy of Sciences, Beijing 100049, China.
AD  - School of Microelectronics, University of Chinese Academy of Sciences, Beijing 
      100049, China.
AD  - Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, 
      Beijing 100083, China.
FAU - Wang, Qian
AU  - Wang Q
AD  - Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese 
      Academy of Sciences, Beijing 100083, China.
AD  - Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, 
      Beijing 100083, China.
FAU - Xu, Xiangang
AU  - Xu X
AD  - State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, 
      China.
FAU - Wang, Xiaoliang
AU  - Wang X
AUID- ORCID: 0000-0003-4559-0553
AD  - Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese 
      Academy of Sciences, Beijing 100083, China.
AD  - Center of Materials Science and Optoelectronics Engineering, University of 
      Chinese Academy of Sciences, Beijing 100049, China.
AD  - School of Microelectronics, University of Chinese Academy of Sciences, Beijing 
      100049, China.
AD  - Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, 
      Beijing 100083, China.
LA  - eng
PT  - Journal Article
DEP - 20210126
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC7911281
OTO - NOTNLM
OT  - different repair methods
OT  - p-GaN high-electron-mobility transistor (HEMT)
OT  - repair process
COIS- The authors declare no conflict of interest.
EDAT- 2021/02/04 06:00
MHDA- 2021/02/04 06:01
PMCR- 2021/01/26
CRDT- 2021/02/03 01:01
PHST- 2020/12/29 00:00 [received]
PHST- 2021/01/22 00:00 [revised]
PHST- 2021/01/24 00:00 [accepted]
PHST- 2021/02/03 01:01 [entrez]
PHST- 2021/02/04 06:00 [pubmed]
PHST- 2021/02/04 06:01 [medline]
PHST- 2021/01/26 00:00 [pmc-release]
AID - mi12020131 [pii]
AID - micromachines-12-00131 [pii]
AID - 10.3390/mi12020131 [doi]
PST - epublish
SO  - Micromachines (Basel). 2021 Jan 26;12(2):131. doi: 10.3390/mi12020131.