PMID- 33534600
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210211
IS  - 1948-7185 (Electronic)
IS  - 1948-7185 (Linking)
VI  - 12
IP  - 5
DP  - 2021 Feb 11
TI  - Thickness-Attuned CsPbBr(3) Nanosheets with Enhanced p-Type Field Effect 
      Mobility.
PG  - 1560-1566
LID - 10.1021/acs.jpclett.0c03815 [doi]
AB  - Since the invention of field effect transistors (FETs) in the mid-20th century, 
      nanosheet (NS) transistors have been considered the future toward fulfilling 
      Moore's law of scaling. Moving beyond conventional semiconductors, thickness 
      tunable orthorhombic CsPbBr(3) NSs are achieved by a perfect control in which the 
      lateral dimension can be extended close to 1 mum. While 18-carbon-chain ligands 
      produce  approximately 4.5 nm thick NSs, the strongly adsorbed less dynamic 8-carbon-chain 
      ligands result in  approximately 9.2 nm NSs. Equipped with a minimum trap state density, a 
      lower effective mass of charge carriers, and better carrier transport, the NSs 
      enable an order of magnitude increase in the field effect mobility as compared to 
      that of CsPbBr(3) nanocubes, thus revealing the efficacy of designing the 
      two-dimensional morphology. The p-type field effect mobility (mu(FET)) of the 
      photoexcited NSs reaches 10(-5) cm(2) V(-1) s(-1) at 200 K upon mitigation of the 
      challenges of ionic screening and constrained tunneling probability across 
      organic ligands.
FAU - Mandal, Arnab
AU  - Mandal A
AD  - Department of Chemical Sciences and Centre for Advanced Functional Materials, 
      Indian Institute of Science Education and Research (IISER), Kolkata, Mohanpur 
      741246, India.
FAU - Ghosh, Anima
AU  - Ghosh A
AD  - Department of Chemical Sciences and Centre for Advanced Functional Materials, 
      Indian Institute of Science Education and Research (IISER), Kolkata, Mohanpur 
      741246, India.
FAU - Senanayak, Satyaprasad P
AU  - Senanayak SP
AUID- ORCID: 0000-0002-8927-685X
AD  - School of Physical Sciences, National Institute of Science Education and 
      Research, HBNI, Jatni 752050, India.
AD  - Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. 
      Thomson Avenue, Cambridge CB3 0HE, United Kingdom.
FAU - Friend, Richard H
AU  - Friend RH
AUID- ORCID: 0000-0001-6565-6308
AD  - Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. 
      Thomson Avenue, Cambridge CB3 0HE, United Kingdom.
FAU - Bhattacharyya, Sayan
AU  - Bhattacharyya S
AUID- ORCID: 0000-0001-8074-965X
AD  - Department of Chemical Sciences and Centre for Advanced Functional Materials, 
      Indian Institute of Science Education and Research (IISER), Kolkata, Mohanpur 
      741246, India.
LA  - eng
PT  - Journal Article
DEP - 20210203
PL  - United States
TA  - J Phys Chem Lett
JT  - The journal of physical chemistry letters
JID - 101526034
SB  - IM
EDAT- 2021/02/04 06:00
MHDA- 2021/02/04 06:01
CRDT- 2021/02/03 17:10
PHST- 2021/02/04 06:00 [pubmed]
PHST- 2021/02/04 06:01 [medline]
PHST- 2021/02/03 17:10 [entrez]
AID - 10.1021/acs.jpclett.0c03815 [doi]
PST - ppublish
SO  - J Phys Chem Lett. 2021 Feb 11;12(5):1560-1566. doi: 10.1021/acs.jpclett.0c03815. 
      Epub 2021 Feb 3.