PMID- 33573008
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210228
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 11
IP  - 2
DP  - 2021 Jan 29
TI  - Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum 
      Nanostructure Intermediate-Band Solar Cells.
LID - 10.3390/nano11020344 [doi]
LID - 344
AB  - From the viewpoint of band engineering, the use of GaSb quantum nanostructures is 
      expected to lead to highly efficient intermediate-band solar cells (IBSCs). In 
      IBSCs, current generation via two-step optical excitations through the 
      intermediate band is the key to the operating principle. This mechanism requires 
      the formation of a strong quantum confinement structure. Therefore, we focused on 
      the material system with GaSb quantum nanostructures embedded in AlGaAs layers. 
      However, studies involving crystal growth of GaSb quantum nanostructures on 
      AlGaAs layers have rarely been reported. In our work, we fabricated GaSb quantum 
      dots (QDs) and quantum rings (QRs) on AlGaAs layers via molecular-beam epitaxy. 
      Using the Stranski-Krastanov growth mode, we demonstrated that lens-shaped GaSb 
      QDs can be fabricated on AlGaAs layers. In addition, atomic force microscopy 
      measurements revealed that GaSb QDs could be changed to QRs under irradiation 
      with an As molecular beam even when they were deposited onto AlGaAs layers. We 
      also investigated the suitability of GaSb/AlGaAs QDSCs and QRSCs for use in IBSCs 
      by evaluating the temperature characteristics of their external quantum 
      efficiency. For the GaSb/AlGaAs material system, the QDSC was found to have 
      slightly better two-step optical excitation temperature characteristics than the 
      QRSC.
FAU - Shoji, Yasushi
AU  - Shoji Y
AUID- ORCID: 0000-0003-4622-6649
AD  - Global Zero Emission Research Center, National Institute of Advanced Industrial 
      Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan.
AD  - Research Center for Advanced Science and Technology (RCAST), The University of 
      Tokyo, Meguro-ku, Tokyo 153-8904, Japan.
FAU - Tamaki, Ryo
AU  - Tamaki R
AD  - Research Center for Advanced Science and Technology (RCAST), The University of 
      Tokyo, Meguro-ku, Tokyo 153-8904, Japan.
FAU - Okada, Yoshitaka
AU  - Okada Y
AUID- ORCID: 0000-0002-1547-5477
AD  - Research Center for Advanced Science and Technology (RCAST), The University of 
      Tokyo, Meguro-ku, Tokyo 153-8904, Japan.
LA  - eng
GR  - 20K15183/Japan Society for the Promotion of Science/
PT  - Journal Article
DEP - 20210129
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC7911294
OTO - NOTNLM
OT  - intermediate-band solar cell
OT  - molecular-beam epitaxy
OT  - quantum dot
COIS- The authors declare no conflict of interest.
EDAT- 2021/02/13 06:00
MHDA- 2021/02/13 06:01
PMCR- 2021/01/29
CRDT- 2021/02/12 01:03
PHST- 2020/12/28 00:00 [received]
PHST- 2021/01/19 00:00 [revised]
PHST- 2021/01/25 00:00 [accepted]
PHST- 2021/02/12 01:03 [entrez]
PHST- 2021/02/13 06:00 [pubmed]
PHST- 2021/02/13 06:01 [medline]
PHST- 2021/01/29 00:00 [pmc-release]
AID - nano11020344 [pii]
AID - nanomaterials-11-00344 [pii]
AID - 10.3390/nano11020344 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2021 Jan 29;11(2):344. doi: 10.3390/nano11020344.