PMID- 33615233
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210223
IS  - 2637-6113 (Electronic)
IS  - 2637-6113 (Linking)
VI  - 3
IP  - 1
DP  - 2021 Jan 26
TI  - Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT 
      and a Single Micro-LED with a High-Modulation Bandwidth.
PG  - 445-450
LID - 10.1021/acsaelm.0c00985 [doi]
AB  - Visible light communications (VLC) require III-nitride visible 
      micro-light-emitting diodes (muLEDs) with a high-modulation bandwidth. Such muLEDs 
      need to be driven at a high injection current density on a kA/cm(2) scale, which 
      is about 2 orders of magnitude higher than those for normal visible LED 
      operation. muLEDs are traditionally fabricated by dry-etching techniques where 
      dry-etching-induced damages are unavoidable, leading to both a substantial 
      reduction in performance and a great challenge to viability at a high injection 
      current density. Furthermore, conventional biasing (which is simply applied 
      across a p-n junction) is good enough for normal LED operation but generates a 
      great challenge for a single muLED, which needs to be modulated at a high 
      injection current density and at a high frequency. In this work, we have proposed 
      a concept for an epitaxial integration and then demonstrated a completely 
      different method that allows us to achieve an epitaxial integration of a single 
      muLED with a diameter of 20 mum and an AlGaN/GaN high-electron-mobility transistor 
      (HEMT), where the emission from a single muLED is modulated by tuning the gate 
      voltage of its HEMT. Furthermore, such a direct epitaxial approach has entirely 
      eliminated any dry-etching-induced damages. As a result, we have demonstrated an 
      epitaxial integration of monolithic on-chip muLED-HEMT with a record modulation 
      bandwidth of 1.2 GHz on industry-compatible c-plane substrates.
CI  - (c) 2021 The Authors. Published by American Chemical Society.
FAU - Cai, Yuefei
AU  - Cai Y
AD  - Department of Electronic and Electrical Engineering, The University of Sheffield, 
      Mappin Street, Sheffield S1 3JD, United Kingdom.
FAU - Haggar, Jack I H
AU  - Haggar JIH
AD  - Department of Electronic and Electrical Engineering, The University of Sheffield, 
      Mappin Street, Sheffield S1 3JD, United Kingdom.
FAU - Zhu, Chenqi
AU  - Zhu C
AD  - Department of Electronic and Electrical Engineering, The University of Sheffield, 
      Mappin Street, Sheffield S1 3JD, United Kingdom.
FAU - Feng, Peng
AU  - Feng P
AD  - Department of Electronic and Electrical Engineering, The University of Sheffield, 
      Mappin Street, Sheffield S1 3JD, United Kingdom.
FAU - Bai, Jie
AU  - Bai J
AD  - Department of Electronic and Electrical Engineering, The University of Sheffield, 
      Mappin Street, Sheffield S1 3JD, United Kingdom.
FAU - Wang, Tao
AU  - Wang T
AD  - Department of Electronic and Electrical Engineering, The University of Sheffield, 
      Mappin Street, Sheffield S1 3JD, United Kingdom.
LA  - eng
PT  - Journal Article
DEP - 20210114
PL  - United States
TA  - ACS Appl Electron Mater
JT  - ACS applied electronic materials
JID - 101734996
PMC - PMC7885730
COIS- The authors declare no competing financial interest.
EDAT- 2021/02/23 06:00
MHDA- 2021/02/23 06:01
PMCR- 2021/02/16
CRDT- 2021/02/22 06:00
PHST- 2020/11/10 00:00 [received]
PHST- 2021/01/04 00:00 [accepted]
PHST- 2021/02/22 06:00 [entrez]
PHST- 2021/02/23 06:00 [pubmed]
PHST- 2021/02/23 06:01 [medline]
PHST- 2021/02/16 00:00 [pmc-release]
AID - 10.1021/acsaelm.0c00985 [doi]
PST - ppublish
SO  - ACS Appl Electron Mater. 2021 Jan 26;3(1):445-450. doi: 10.1021/acsaelm.0c00985. 
      Epub 2021 Jan 14.