PMID- 33714340
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210314
IS  - 1533-4899 (Electronic)
IS  - 1533-4880 (Linking)
VI  - 21
IP  - 8
DP  - 2021 Aug 1
TI  - Thermal Boundary Resistance Extraction of GaN-on-Diamond Substrate from 
      Transmission Line Method Pattern Using Micro-Raman Spectroscopy and Thermal 
      Simulation.
PG  - 4434-4437
LID - 10.1166/jnn.2021.19414 [doi]
AB  - Heat dissipation properties are very important in AlGaN/GaN RF high electron 
      mobility transistor (HEMT) devices operating at high frequency and high power. 
      Therefore, in order to extract the thermal conductivity of the substrate and 
      device, which are essential for the analysis of the heat dissipation 
      characteristics, various methods of extraction were attempted. And this 
      experiments were conducted in parallel with micro-raman measurement and thermal 
      simulation. As a result, it was possible to extract the thermal conductivity of 
      each GaN-on-diamond epi layer by matching the thermal simulation data and the 
      shift of the micro-raman peak according to various operating states and 
      temperatures of the transmission line method (TLM) pattern. In particular, we 
      tried to extract the thermal boundary resistance (TBR) of the interface layer 
      (SiN(x)) for adhesion between GaN and diamond, which greatly affects the thermal 
      conductivity of the device, and successfully extracted the following thermal 
      conductivity value of K(TBR) = 3.162.(T/300)(-0.8) (W/mK) from GaN and diamond 
      interface layer.
FAU - Ki, Ra-Seong
AU  - Ki RS
AD  - Department of Electrical Engineering and Computer Science, Seoul National 
      University, Seoul 151-744, Korea.
FAU - Seo, Kwang-Seok
AU  - Seo KS
AD  - Department of Electrical Engineering and Computer Science, Seoul National 
      University, Seoul 151-744, Korea.
FAU - Cha, Ho-Young
AU  - Cha HY
AD  - Department of Electronic and Electrical Engineering, Hongik University, Seoul, 
      Korea.
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
SB  - IM
EDAT- 2021/03/15 06:00
MHDA- 2021/03/15 06:01
CRDT- 2021/03/14 20:19
PHST- 2021/03/14 20:19 [entrez]
PHST- 2021/03/15 06:00 [pubmed]
PHST- 2021/03/15 06:01 [medline]
AID - 10.1166/jnn.2021.19414 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2021 Aug 1;21(8):4434-4437. doi: 10.1166/jnn.2021.19414.