PMID- 33856222
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210428
IS  - 1530-6992 (Electronic)
IS  - 1530-6984 (Linking)
VI  - 21
IP  - 8
DP  - 2021 Apr 28
TI  - Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional 
      MoS(2) Field Effect Transistors.
PG  - 3503-3510
LID - 10.1021/acs.nanolett.1c00180 [doi]
AB  - Molybdenum disulfide (MoS(2)) has been regarded as one of the most important 
      n-type two-dimensional (2D) transition metal dichalcogenide semiconductors for 
      nanoscale electron devices. Relatively high contact resistance (R(C)) remains as 
      an issue in the 2D-devices yet to be resolved. Reliable technique is very 
      compelling to practically produce low R(C) values in device electronics, although 
      scientific approaches have been made to obtain a record-low R(C). To resolve this 
      practical issue, we here use thermal-evaporated ultrathin LiF between channel and 
      source/drain metal to fabricate 2D-like MoS(2) field effect transistors (FETs) 
      with minimum R(C). Under 4-bar FET method, R(C) less than  approximately 600 Omega.mum is achieved 
      from the LiF/Au contact MoS(2) FET. Our normal 2-bar FET with LiF thus shows the 
      same mobility as that of 4-bar FET that should have no R(C) in principle. On the 
      basis of these results, ultrathin LiF is also applied for transparent conducting 
      oxide contact, successfully enabling transparent MoS(2) FETs.
FAU - Cho, Hyunmin
AU  - Cho H
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Kang, Donghee
AU  - Kang D
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Lee, Yangjin
AU  - Lee Y
AUID- ORCID: 0000-0001-7336-1198
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
AD  - Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea.
FAU - Bae, Heesun
AU  - Bae H
AUID- ORCID: 0000-0002-2715-2667
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Hong, Sungjae
AU  - Hong S
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Cho, Yongjae
AU  - Cho Y
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Kim, Kwanpyo
AU  - Kim K
AUID- ORCID: 0000-0001-8497-2330
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
AD  - Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea.
FAU - Yi, Yeonjin
AU  - Yi Y
AUID- ORCID: 0000-0003-4944-8319
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Park, Ji Hoon
AU  - Park JH
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
FAU - Im, Seongil
AU  - Im S
AUID- ORCID: 0000-0003-0723-5075
AD  - Van der Waals Materials Research Center, Department of Physics, Yonsei 
      University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
LA  - eng
PT  - Journal Article
DEP - 20210415
PL  - United States
TA  - Nano Lett
JT  - Nano letters
JID - 101088070
SB  - IM
OTO - NOTNLM
OT  - 4-bar measurement
OT  - Contact resistance
OT  - Lithium fluoride
OT  - Molybdenum disulfide
OT  - TLM
OT  - Transistor
EDAT- 2021/04/16 06:00
MHDA- 2021/04/16 06:01
CRDT- 2021/04/15 12:10
PHST- 2021/04/16 06:00 [pubmed]
PHST- 2021/04/16 06:01 [medline]
PHST- 2021/04/15 12:10 [entrez]
AID - 10.1021/acs.nanolett.1c00180 [doi]
PST - ppublish
SO  - Nano Lett. 2021 Apr 28;21(8):3503-3510. doi: 10.1021/acs.nanolett.1c00180. Epub 
      2021 Apr 15.