PMID- 33882479
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210512
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 32
IP  - 31
DP  - 2021 May 10
TI  - Reducing metal/graphene contact resistance via N, N-dimethylacetamide-assisted 
      clean fabrication process.
LID - 10.1088/1361-6528/abfa56 [doi]
AB  - Contact resistance (R(C)) is of great importance for radio frequency (RF) 
      applications of graphene, especially graphene field effect transistors (FETs) 
      with short channel. FETs and transmission line model test structures based on 
      chemical vapor deposition grown graphene are fabricated. The effects of employing 
      traditional lithography solvent (Acetone) and strong solvents for photo resist, 
      such as N, N-Dimethylacetamide (ZDMAC) and N-Methyl pyrrolidone (NMP), are 
      systematically investigated. It was found that ZDMAC and NMP have more 
      proficiency than acetone to remove the photo-resist residues and contaminations 
      attached on graphene surface, enabling clean surface of graphene. However, strong 
      solvents are found to destroy the lattice structure of graphene channel and 
      induce defects in graphene lattice. Clean surface contributes to a significant 
      reduction in theR(C)between graphene channel and metal electrode, and the defects 
      introduced on graphene surface underneath metal electrodes also contribute the 
      reduction ofR(C). But defects and deformation of lattice will increase the 
      resistance in graphene channel and lead to the compromise of device performance. 
      To address this problem, a mix wet-chemical approach employing both acetone and 
      ZDMAC was developed in our study to realize a 19.07% reduction ofR(C), without an 
      unacceptable mass production of defects.
CI  - (c) 2021 IOP Publishing Ltd.
FAU - Zhu, Chao-Yi
AU  - Zhu CY
AUID- ORCID: 0000-0001-5119-5512
AD  - High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute 
      of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's 
      Republic of China.
AD  - University of Chinese Academy of Sciences, Beijing 100049, People's Republic of 
      China.
FAU - Peng, Song-Ang
AU  - Peng SA
AD  - High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute 
      of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's 
      Republic of China.
AD  - University of Chinese Academy of Sciences, Beijing 100049, People's Republic of 
      China.
FAU - Zhang, Xiao-Rui
AU  - Zhang XR
AUID- ORCID: 0000-0002-5834-7432
AD  - High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute 
      of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's 
      Republic of China.
AD  - University of Chinese Academy of Sciences, Beijing 100049, People's Republic of 
      China.
FAU - Yao, Yao
AU  - Yao Y
AUID- ORCID: 0000-0001-9699-3569
AD  - High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute 
      of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's 
      Republic of China.
AD  - Department of Chemistry, City University of Hong Kong, Hong Kong 999077, Hong 
      Kong, People's Republic of China.
FAU - Huang, Xin-Nan
AU  - Huang XN
AUID- ORCID: 0000-0003-1900-5357
AD  - High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute 
      of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's 
      Republic of China.
AD  - University of Chinese Academy of Sciences, Beijing 100049, People's Republic of 
      China.
FAU - Yan, Yun-Peng
AU  - Yan YP
AD  - High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute 
      of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's 
      Republic of China.
AD  - University of Chinese Academy of Sciences, Beijing 100049, People's Republic of 
      China.
FAU - Zhang, Da-Yong
AU  - Zhang DY
AD  - High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute 
      of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's 
      Republic of China.
FAU - Shi, Jing-Yuan
AU  - Shi JY
AD  - High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute 
      of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's 
      Republic of China.
FAU - Jin, Zhi
AU  - Jin Z
AD  - High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute 
      of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's 
      Republic of China.
LA  - eng
PT  - Journal Article
DEP - 20210510
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
OTO - NOTNLM
OT  - ZDMAC
OT  - acetone
OT  - clean surface
OT  - contact resistance
OT  - graphene
OT  - short channel devices
EDAT- 2021/04/22 06:00
MHDA- 2021/04/22 06:01
CRDT- 2021/04/21 20:17
PHST- 2021/03/02 00:00 [received]
PHST- 2021/04/21 00:00 [accepted]
PHST- 2021/04/22 06:00 [pubmed]
PHST- 2021/04/22 06:01 [medline]
PHST- 2021/04/21 20:17 [entrez]
AID - 10.1088/1361-6528/abfa56 [doi]
PST - epublish
SO  - Nanotechnology. 2021 May 10;32(31). doi: 10.1088/1361-6528/abfa56.