PMID- 33919816
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210502
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 12
IP  - 4
DP  - 2021 Apr 14
TI  - Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating 
      Etching Technique with Multi-Finger Architecture Modulation for High Power 
      Application.
LID - 10.3390/mi12040432 [doi]
LID - 432
AB  - Normally-off p-gallium nitride (GaN) high electron mobility transistor (HEMT) 
      devices with multi-finger layout were successfully fabricated by use of a 
      self-terminating etching technique with Cl(2)/BCl(3)/SF(6)-mixed gas plasma. This 
      etching technique features accurate etching depth control and low surface plasma 
      damage. Several devices with different gate widths and number of fingers were 
      fabricated to investigate the effect on output current density. We then realized 
      a high current enhancement-mode p-GaN HEMT device with a total gate width of 60 
      mm that exhibits a threshold voltage of 2.2 V and high drain current of 6.7 A.
FAU - Chang, Ya-Chun
AU  - Chang YC
AD  - Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 
      Taipei 106319, Taiwan.
FAU - Ho, Yu-Li
AU  - Ho YL
AD  - Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 
      Taipei 106319, Taiwan.
FAU - Huang, Tz-Yan
AU  - Huang TY
AD  - Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 
      Taipei 106319, Taiwan.
FAU - Huang, Ding-Wei
AU  - Huang DW
AD  - Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 
      Taipei 106319, Taiwan.
FAU - Wu, Chao-Hsin
AU  - Wu CH
AUID- ORCID: 0000-0001-7849-773X
AD  - Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 
      Taipei 106319, Taiwan.
AD  - Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 
      106319, Taiwan.
LA  - eng
GR  - NCSIST-403-V307(110)/National Chung-Shan Institute of Science & Technology/
PT  - Journal Article
DEP - 20210414
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC8070762
OTO - NOTNLM
OT  - enhancement-mode
OT  - gallium nitride (GaN)
OT  - multi-finger layout
OT  - p-GaN HEMT
OT  - self-terminating etching
COIS- The authors declare no conflict of interest.
EDAT- 2021/05/01 06:00
MHDA- 2021/05/01 06:01
PMCR- 2021/04/14
CRDT- 2021/04/30 01:13
PHST- 2021/03/16 00:00 [received]
PHST- 2021/04/03 00:00 [revised]
PHST- 2021/04/08 00:00 [accepted]
PHST- 2021/04/30 01:13 [entrez]
PHST- 2021/05/01 06:00 [pubmed]
PHST- 2021/05/01 06:01 [medline]
PHST- 2021/04/14 00:00 [pmc-release]
AID - mi12040432 [pii]
AID - micromachines-12-00432 [pii]
AID - 10.3390/mi12040432 [doi]
PST - epublish
SO  - Micromachines (Basel). 2021 Apr 14;12(4):432. doi: 10.3390/mi12040432.