PMID- 33957757
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210520
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 13
IP  - 19
DP  - 2021 May 19
TI  - Sensitive, Reusable, Surface-Enhanced Raman Scattering Sensors Constructed with a 
      3D Graphene/Si Hybrid.
PG  - 23081-23091
LID - 10.1021/acsami.1c02182 [doi]
AB  - Surface-enhanced Raman scattering (SERS) substrates based on graphene and its 
      derivatives have recently attracted attention among those interested in the 
      detection of trace molecules; however, these substrates generally show poor 
      uniformity, an unsatisfactory enhancement factor, and require a complex 
      fabrication process. Herein, we design and fabricate three-dimensional (3D) 
      graphene/silicon (3D-Gr/Si) heterojunction SERS substrates to detect various 
      types of molecules. Notably, the detection limit of 3D-Gr/Si can reach 10(-10) M 
      for rhodamine 6G (R6G) and rhodamine B (RB), 10(-7) M for crystal violet (CRV), 
      copper(II) phthalocyanine (CuPc), and methylene blue (MB), 10(-8) M for dopamine 
      (DA), 10(-6) M for bovine serum albumin (BSA), and 10(-5) M for melamine (Mel), 
      which is superior to most reported graphene-based SERS substrates. Besides, the 
      proposed 3D-Gr/Si heterojunction SERS substrates can achieve a high uniformity 
      with relative standard deviations (RSDs) of less than 5%. Moreover, the 3D-Gr/Si 
      SERS substrates are reusable after washing with ethyl alcohol to remove the 
      adsorbed molecules. These excellent SERS performances are attributed to the novel 
      3D structure and abundantly exposed atomically thin edges, which facilitate 
      charge transfer between 3D-Gr and probe molecules. We believe that the 3D-Gr/Si 
      heterojunction SERS substrates offer potential for practical applications in 
      biochemical molecule detection and provide insight into the design of 
      high-performance SERS substrates.
FAU - Zhu, Wei
AU  - Zhu W
AD  - Department of Microelectronic Science and Engineering, School of Physical Science 
      and Technology, Ningbo University, Ningbo 315211, P. R. China.
FAU - Feng, Xiaoqiang
AU  - Feng X
AD  - Department of Microelectronic Science and Engineering, School of Physical Science 
      and Technology, Ningbo University, Ningbo 315211, P. R. China.
FAU - Liu, Zhiduo
AU  - Liu Z
AD  - State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, 
      Chinese Academy of Sciences, Beijing 100083, P. R. China.
FAU - Zhao, Menghan
AU  - Zhao M
AD  - Department of Microelectronic Science and Engineering, School of Physical Science 
      and Technology, Ningbo University, Ningbo 315211, P. R. China.
FAU - He, Peng
AU  - He P
AUID- ORCID: 0000-0003-0606-8762
AD  - State Key Laboratory of Functional Materials for Informatics, Shanghai Institute 
      of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 
      200050, P. R. China.
FAU - Yang, Siwei
AU  - Yang S
AUID- ORCID: 0000-0002-5227-8210
AD  - State Key Laboratory of Functional Materials for Informatics, Shanghai Institute 
      of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 
      200050, P. R. China.
FAU - Tang, Shiwei
AU  - Tang S
AUID- ORCID: 0000-0003-3124-0165
AD  - Department of Microelectronic Science and Engineering, School of Physical Science 
      and Technology, Ningbo University, Ningbo 315211, P. R. China.
FAU - Chen, Da
AU  - Chen D
AUID- ORCID: 0000-0002-0334-9502
AD  - Department of Microelectronic Science and Engineering, School of Physical Science 
      and Technology, Ningbo University, Ningbo 315211, P. R. China.
FAU - Guo, Qinglei
AU  - Guo Q
AD  - School of Microelectronics, Shandong University, Jinan 250100, P. R. China.
FAU - Wang, Gang
AU  - Wang G
AUID- ORCID: 0000-0002-2288-3807
AD  - Department of Microelectronic Science and Engineering, School of Physical Science 
      and Technology, Ningbo University, Ningbo 315211, P. R. China.
FAU - Ding, Guqiao
AU  - Ding G
AUID- ORCID: 0000-0003-1674-3477
AD  - Department of Microelectronic Science and Engineering, School of Physical Science 
      and Technology, Ningbo University, Ningbo 315211, P. R. China.
AD  - State Key Laboratory of Functional Materials for Informatics, Shanghai Institute 
      of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 
      200050, P. R. China.
LA  - eng
PT  - Journal Article
DEP - 20210507
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - chemical mechanism
OT  - crystal violet
OT  - electromagnetic mechanism
OT  - phthalocyanine
OT  - relative standard deviations
EDAT- 2021/05/08 06:00
MHDA- 2021/05/08 06:01
CRDT- 2021/05/07 05:40
PHST- 2021/05/08 06:00 [pubmed]
PHST- 2021/05/08 06:01 [medline]
PHST- 2021/05/07 05:40 [entrez]
AID - 10.1021/acsami.1c02182 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2021 May 19;13(19):23081-23091. doi: 
      10.1021/acsami.1c02182. Epub 2021 May 7.