PMID- 34100510
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210618
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 13
IP  - 23
DP  - 2021 Jun 17
TI  - Gate-controlled ambipolar transport in b-AsP crystals and their VIS-NIF 
      photodetection.
PG  - 10579-10586
LID - 10.1039/d1nr01715b [doi]
AB  - As a new two-dimensional elemental layered semiconductor, black phosphorus (b-P) 
      has received tremendous attention due to its excellent physical and chemical 
      properties and has potential applications in the fields of catalysis, energy, and 
      micro/nano-optoelectronic devices. However, studies have found that b-P is very 
      unstable and will decompose within a few minutes under humid air conditions. 
      Element doping is an effective method for adjusting the physical and chemical 
      properties of crystals. Theoretical and experimental studies have confirmed that 
      the stability of b-P crystals is significantly improved after arsenic doping, and 
      the crystals also exhibit excellent photoresponse and electrical transport 
      performances. In this work, we investigate the physical properties of a component 
      of black arsenic phosphorus crystals (b-As0.084P0.916) and the potential 
      applications in field effect transistors (FETs) and broadband photodetectors. An 
      obvious ambipolar behavior is observed in the transfer characteristics of 
      b-As0.084P0.916 based FETs, with drain current modulation on the order of 105 and 
      the highest charge-carrier mobility of up to 147 cm2 V-1 s-1. The physisorption 
      of atmospheric species on the surface of the FETs is the main factor for the 
      formation of Schottky contacts between the Au electrodes and the b-As0.084P0.916 
      crystal. Temperature-dependent electrical characteristics show that the Fermi 
      level shifts from the valence band to the middle level between the conduction 
      band and valence band as the temperature decreases. In addition, the FETs also 
      exhibit excellent photoresponse properties from the visible to near-infrared 
      region (450-2200 nm), with a responsivity of 37 A W-1, a specific detectivity of 
      7.18 x 1010 Jones, and a fast response speed (taurise  approximately  0.04 s and taudecay  approximately  0.14 
      s). These results suggest that b-As0.084P0.916 crystals are a promising candidate 
      for future electronic and optoelectronic devices.
FAU - Zhong, Mianzeng
AU  - Zhong M
AUID- ORCID: 0000-0003-0343-5248
AD  - Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and 
      Electronics, Central South University, Changsha 410083, Hunan, China. 
      junhe@csu.edu.cn.
FAU - Meng, Haotong
AU  - Meng H
AD  - Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and 
      Electronics, Central South University, Changsha 410083, Hunan, China. 
      junhe@csu.edu.cn.
FAU - Ren, Zhihui
AU  - Ren Z
AD  - State Key Laboratory of Superlattices and Microstructures, Institute of 
      Semiconductors, Chinese Academy of Sciences & Center of Materials Science and 
      Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 
      100083, China. xiaoting13@semi.ac.cn.
FAU - Huang, Le
AU  - Huang L
AD  - School of Materials and Energy, Guangdong University of Technology, Guangzhou 
      510006, China.
FAU - Yang, Juehan
AU  - Yang J
AD  - State Key Laboratory of Superlattices and Microstructures, Institute of 
      Semiconductors, Chinese Academy of Sciences & Center of Materials Science and 
      Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 
      100083, China. xiaoting13@semi.ac.cn.
FAU - Li, Bo
AU  - Li B
AD  - Department of Applied Physics, School of Physics and Electronics, Hunan 
      University, Changsha 410082, Hunan, China.
FAU - Xia, Qinglin
AU  - Xia Q
AD  - Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and 
      Electronics, Central South University, Changsha 410083, Hunan, China. 
      junhe@csu.edu.cn.
FAU - Wang, Xiaoting
AU  - Wang X
AD  - State Key Laboratory of Superlattices and Microstructures, Institute of 
      Semiconductors, Chinese Academy of Sciences & Center of Materials Science and 
      Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 
      100083, China. xiaoting13@semi.ac.cn.
FAU - Wei, Zhongming
AU  - Wei Z
AUID- ORCID: 0000-0002-6237-0993
AD  - State Key Laboratory of Superlattices and Microstructures, Institute of 
      Semiconductors, Chinese Academy of Sciences & Center of Materials Science and 
      Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 
      100083, China. xiaoting13@semi.ac.cn.
FAU - He, Jun
AU  - He J
AD  - Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and 
      Electronics, Central South University, Changsha 410083, Hunan, China. 
      junhe@csu.edu.cn.
LA  - eng
PT  - Journal Article
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
SB  - IM
EDAT- 2021/06/09 06:00
MHDA- 2021/06/09 06:01
CRDT- 2021/06/08 08:43
PHST- 2021/06/09 06:00 [pubmed]
PHST- 2021/06/09 06:01 [medline]
PHST- 2021/06/08 08:43 [entrez]
AID - 10.1039/d1nr01715b [doi]
PST - ppublish
SO  - Nanoscale. 2021 Jun 17;13(23):10579-10586. doi: 10.1039/d1nr01715b.