PMID- 34194944
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20231107
IS  - 2198-3844 (Electronic)
IS  - 2198-3844 (Linking)
VI  - 8
IP  - 12
DP  - 2021 Jun
TI  - Steep-Slope Gate-Connected Atomic Threshold Switching Field-Effect Transistor 
      with MoS(2) Channel and Its Application to Infrared Detectable Phototransistors.
PG  - 2100208
LID - 10.1002/advs.202100208 [doi]
LID - 2100208
AB  - For next-generation electronics and optoelectronics, 2D-layered 
      nanomaterial-based field effect transistors (FETs) have garnered attention as 
      promising candidates owing to their remarkable properties. However, their 
      subthreshold swings (SS) cannot be lower than 60 mV/decade owing to the 
      limitation of the thermionic carrier injection mechanism, and it remains a major 
      challenge in 2D-layered nanomaterial-based transistors. Here, a gate-connected 
      MoS(2) atomic threshold switching FET using a nitrogen-doped HfO(2)-based 
      threshold switching (TS) device is developed. The proposed device achieves an 
      extremely low SS of 11 mV/decade and a high on-off ratio of  approximately 10(6) by maintaining 
      a high on-state drive current due to the steep switching of the TS device at the 
      gate region. In particular, the proposed device can function as an infrared 
      detectable phototransistor with excellent optical properties. The proposed device 
      is expected to pave the way for the development of future 2D channel-based 
      electrical and optical transistors.
CI  - (c) 2021 The Authors. Advanced Science published by Wiley-VCH GmbH.
FAU - Kim, Seung-Geun
AU  - Kim SG
AD  - Department of Semiconductor Systems Engineering Korea University 145, Anam-ro, 
      Seongbuk-gu Seoul 02841 Korea.
FAU - Kim, Seung-Hwan
AU  - Kim SH
AD  - School of Electrical Engineering Korea University 145, Anam-ro, Seongbuk-gu Seoul 
      02841 Korea.
FAU - Kim, Gwang-Sik
AU  - Kim GS
AD  - School of Electrical Engineering Korea University 145, Anam-ro, Seongbuk-gu Seoul 
      02841 Korea.
FAU - Jeon, Hyeok
AU  - Jeon H
AD  - Department of Semiconductor Systems Engineering Korea University 145, Anam-ro, 
      Seongbuk-gu Seoul 02841 Korea.
FAU - Kim, Taehyun
AU  - Kim T
AD  - Department of Semiconductor Systems Engineering Korea University 145, Anam-ro, 
      Seongbuk-gu Seoul 02841 Korea.
FAU - Yu, Hyun-Yong
AU  - Yu HY
AUID- ORCID: 0000-0001-9446-5981
AD  - School of Electrical Engineering Korea University 145, Anam-ro, Seongbuk-gu Seoul 
      02841 Korea.
LA  - eng
PT  - Journal Article
DEP - 20210503
PL  - Germany
TA  - Adv Sci (Weinh)
JT  - Advanced science (Weinheim, Baden-Wurttemberg, Germany)
JID - 101664569
SB  - IM
PMC - PMC8224431
OTO - NOTNLM
OT  - 2D channel
OT  - atomic threshold switching field-effect transistors
OT  - high detectivity
OT  - infrared detectable phototransistors
OT  - low subthreshold swing
COIS- The authors declare no conflict of interest.
EDAT- 2021/07/02 06:00
MHDA- 2021/07/02 06:01
PMCR- 2021/05/03
CRDT- 2021/07/01 07:01
PHST- 2021/01/18 00:00 [received]
PHST- 2021/02/25 00:00 [revised]
PHST- 2021/07/01 07:01 [entrez]
PHST- 2021/07/02 06:00 [pubmed]
PHST- 2021/07/02 06:01 [medline]
PHST- 2021/05/03 00:00 [pmc-release]
AID - ADVS2566 [pii]
AID - 10.1002/advs.202100208 [doi]
PST - epublish
SO  - Adv Sci (Weinh). 2021 May 3;8(12):2100208. doi: 10.1002/advs.202100208. 
      eCollection 2021 Jun.