PMID- 34204507
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20240402
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 14
IP  - 12
DP  - 2021 Jun 17
TI  - Conformally Gated Surface Conducting Behaviors of Single-Walled Carbon Nanotube 
      Thin-Film-Transistors.
LID - 10.3390/ma14123361 [doi]
LID - 3361
AB  - Semiconducting single-walled carbon nanotubes (s-SWCNTs) have gathered 
      significant interest in various emerging electronics due to their outstanding 
      electrical and mechanical properties. Although large-area and low-cost 
      fabrication of s-SWCNT field effect transistors (FETs) can be easily achieved via 
      solution processing, the electrical performance of the solution-based s-SWCNT 
      FETs is often limited by the charge transport in the s-SWCNT networks and 
      interface between the s-SWCNT and the dielectrics depending on both s-SWCNT 
      solution synthesis and device architecture. Here, we investigate the surface and 
      interfacial electro-chemical behaviors of s-SWCNTs. In addition, we propose a 
      cost-effective and straightforward process capable of minimizing polymers bound 
      to s-SWCNT surfaces acting as an interfering element for the charge carrier 
      transport via a heat-assisted purification (HAP). With the HAP treated s-SWCNTs, 
      we introduced conformal dielectric configuration for s-SWCNT FETs, which are 
      explored by a carefully designed wide array of electrical and chemical 
      characterizations with finite-element analysis (FEA) computer simulation. For 
      more favorable gate-field-induced surface and interfacial behaviors of s-SWCNT, 
      we implemented conformally gated highly capacitive s-SWCNT FETs with ion-gel 
      dielectrics, demonstrating field-effect mobility of ~8.19 cm(2)/V⋅s and on/off 
      current ratio of ~10(5) along with negligible hysteresis.
FAU - Kim, Kyung-Tae
AU  - Kim KT
AD  - Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 
      06974, Korea.
FAU - Lee, Keon Woo
AU  - Lee KW
AD  - Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 
      06974, Korea.
FAU - Moon, Sanghee
AU  - Moon S
AD  - Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 
      06974, Korea.
FAU - Park, Joon Bee
AU  - Park JB
AD  - Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 
      06974, Korea.
FAU - Park, Chan-Yong
AU  - Park CY
AD  - Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 
      06974, Korea.
FAU - Nam, Seung-Ji
AU  - Nam SJ
AD  - Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 
      06974, Korea.
FAU - Kim, Jaehyun
AU  - Kim J
AD  - Department of Chemistry and Materials Research Center, Northwestern University, 
      2145 Sheridan Road, Evanston, IL 60208, USA.
FAU - Lee, Myoung-Jae
AU  - Lee MJ
AD  - Convergence Research Institute, Daegu Gyeongbuk Institute of Science and 
      Technology (DGIST), Daegu 42988, Korea.
FAU - Heo, Jae Sang
AU  - Heo JS
AUID- ORCID: 0000-0002-5607-3327
AD  - School of Advanced Materials Science and Engineering, Sungkyunkwan University, 
      Suwon 16419, Korea.
FAU - Park, Sung Kyu
AU  - Park SK
AUID- ORCID: 0000-0001-9617-2541
AD  - Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul 
      06974, Korea.
LA  - eng
GR  - No. P0002397, HRD program for Industrial Convergence of Wearable Smart 
      Devices/Korea Institute for Advancement of Technology/
GR  - No. NRF-2019R1A2C2002447/National Research Foundation of Korea/
GR  - Not applicable/Chung-Ang University Graduate Research Scholarship in 2015/
PT  - Journal Article
DEP - 20210617
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC8234559
OTO - NOTNLM
OT  - high purity SWCNT separation process
OT  - single-walled carbon nanotube (SWCNTs)
OT  - thin-film transistors (TFTs)
COIS- The authors declare no conflict of interest.
EDAT- 2021/07/03 06:00
MHDA- 2021/07/03 06:01
PMCR- 2021/06/17
CRDT- 2021/07/02 01:21
PHST- 2021/05/12 00:00 [received]
PHST- 2021/05/31 00:00 [revised]
PHST- 2021/06/11 00:00 [accepted]
PHST- 2021/07/02 01:21 [entrez]
PHST- 2021/07/03 06:00 [pubmed]
PHST- 2021/07/03 06:01 [medline]
PHST- 2021/06/17 00:00 [pmc-release]
AID - ma14123361 [pii]
AID - materials-14-03361 [pii]
AID - 10.3390/ma14123361 [doi]
PST - epublish
SO  - Materials (Basel). 2021 Jun 17;14(12):3361. doi: 10.3390/ma14123361.