PMID- 34206818
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210727
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 12
IP  - 7
DP  - 2021 Jun 26
TI  - Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device 
      Characteristics and Analysis of Interface Traps.
LID - 10.3390/mi12070751 [doi]
LID - 751
AB  - This study proposes an analysis of the physics-based TCAD (Technology 
      Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron 
      Mobility Transistor) device structures grown on Si (111) substrate which is 
      calibrated against measurement data. The presence of traps and activation 
      energies in the device structure will impact the performance of a device, the 
      source of traps and position of traps in the device remains as a complex exercise 
      until today. The key parameters for the precise tuning of threshold voltage 
      (V(th)) in GaN transistors are the control of the positive fixed charges -5 x 
      10(12) cm(-2), donor-like traps -3 x 10(13) cm(-2) at the nitride/GaN interfaces, 
      the energy of the donor-like traps 1.42 eV below the conduction band and the 
      acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 
      eV below the conduction band. Hence in this paper, the sensitivity of the trap 
      mechanisms in GaN/AlGaN/GaN HEMT transistors, understanding the absolute vertical 
      electric field distribution, electron density and the physical characteristics of 
      the device has been investigated and the results are in good agreement with GaN 
      experimental data.
FAU - Song, Yu-Lin
AU  - Song YL
AUID- ORCID: 0000-0002-9539-588X
AD  - Department of Computer Science and Information Engineering, Asia University, 
      Taichung 41354, Taiwan.
AD  - Department of Bioinformatics and Medical Engineering, Asia University, Taichung 
      41354, Taiwan.
FAU - Reddy, Manoj Kumar
AU  - Reddy MK
AD  - Department of Computer Science and Information Engineering, Asia University, 
      Taichung 41354, Taiwan.
FAU - Chang, Luh-Maan
AU  - Chang LM
AD  - Department of Civil Engineering, National Taiwan University, Taipei 10617, 
      Taiwan.
FAU - Sheu, Gene
AU  - Sheu G
AD  - Department of Computer Science and Information Engineering, Asia University, 
      Taichung 41354, Taiwan.
LA  - eng
GR  - MOST 109-2221-E-002-023/Ministry of Science and Technology, Taiwan/
PT  - Journal Article
DEP - 20210626
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC8303573
OTO - NOTNLM
OT  - GaN/AlGaN/GaN
OT  - HEMT
OT  - TCAD
OT  - traps
COIS- The authors declare no conflict of interest.
EDAT- 2021/07/03 06:00
MHDA- 2021/07/03 06:01
PMCR- 2021/06/26
CRDT- 2021/07/02 01:29
PHST- 2021/05/03 00:00 [received]
PHST- 2021/06/17 00:00 [revised]
PHST- 2021/06/22 00:00 [accepted]
PHST- 2021/07/02 01:29 [entrez]
PHST- 2021/07/03 06:00 [pubmed]
PHST- 2021/07/03 06:01 [medline]
PHST- 2021/06/26 00:00 [pmc-release]
AID - mi12070751 [pii]
AID - micromachines-12-00751 [pii]
AID - 10.3390/mi12070751 [doi]
PST - epublish
SO  - Micromachines (Basel). 2021 Jun 26;12(7):751. doi: 10.3390/mi12070751.