PMID- 34337417
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210803
IS  - 2637-6113 (Electronic)
IS  - 2637-6113 (Linking)
VI  - 3
IP  - 7
DP  - 2021 Jul 27
TI  - On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing 
      Conditions and Interface Chemistry with Device Electrical Performance.
PG  - 3185-3199
LID - 10.1021/acsaelm.1c00379 [doi]
AB  - Despite the extensive ongoing research on MoS(2) field effect transistors (FETs), 
      the key role of device processing conditions in the chemistry involved at the 
      metal-to-MoS(2) interface and their influence on the electrical performance are 
      often overlooked. In addition, the majority of reports on MoS(2) contacts are 
      based on exfoliated MoS(2), whereas synthetic films are even more susceptible to 
      the changes made in device processing conditions. In this paper, working FETs 
      with atomic layer deposition (ALD)-based MoS(2) films and Ti/Au contacts are 
      demonstrated, using current-voltage (I-V) characterization. In pursuit of 
      optimizing the contacts, high-vacuum thermal annealing as well as O(2)/Ar plasma 
      cleaning treatments are introduced, and their influence on the electrical 
      performance is studied. The electrical findings are linked to the interface 
      chemistry through X-ray photoelectron spectroscopy (XPS) and scanning 
      transmission electron microscopy (STEM) analyses. XPS evaluation reveals that the 
      concentration of organic residues on the MoS(2) surface, as a result of resist 
      usage during the device processing, is significant. Removal of these 
      contaminations with O(2)/Ar plasma changes the MoS(2) chemical state and enhances 
      the MoS(2) electrical properties. Based on the STEM analysis, the observed 
      progress in the device electrical characteristics could also be associated with 
      the formation of a continuous TiS (x) layer at the Ti-to-MoS(2) interface. 
      Scaling down the Ti interlayer thickness and replacing it with Cr is found to be 
      beneficial as well, leading to further device performance advancements. Our 
      findings are of value for attaining optimal contacts to synthetic MoS(2) films.
CI  - (c) 2021 The Authors. Published by American Chemical Society.
FAU - Mahlouji, Reyhaneh
AU  - Mahlouji R
AD  - Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 
      Eindhoven 5600 MB, The Netherlands.
FAU - Zhang, Yue
AU  - Zhang Y
AD  - Laboratory of Inorganic Materials and Catalysis, Department of Chemical 
      Engineering and Chemistry, Eindhoven University of Technology, P.O. Box 513, 
      Eindhoven 5600 MB, The Netherlands.
FAU - Verheijen, Marcel A
AU  - Verheijen MA
AUID- ORCID: 0000-0002-8749-7755
AD  - Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 
      Eindhoven 5600 MB, The Netherlands.
AD  - Eurofins Materials Science, High Tech Campus 11, Eindhoven 5656 AE, The 
      Netherlands.
FAU - Hofmann, Jan P
AU  - Hofmann JP
AUID- ORCID: 0000-0002-5765-1096
AD  - Laboratory of Inorganic Materials and Catalysis, Department of Chemical 
      Engineering and Chemistry, Eindhoven University of Technology, P.O. Box 513, 
      Eindhoven 5600 MB, The Netherlands.
AD  - Surface Science Laboratory, Department of Materials and Earth Sciences, Technical 
      University of Darmstadt, Otto-Berndt-Strasse 3, Darmstadt 64287, Germany.
FAU - Kessels, Wilhelmus M M
AU  - Kessels WMM
AUID- ORCID: 0000-0002-7630-8226
AD  - Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 
      Eindhoven 5600 MB, The Netherlands.
FAU - Sagade, Abhay A
AU  - Sagade AA
AD  - Laboratory for Advanced Nanoelectronic Devices, Department of Physics and 
      Nanotechnology, SRM Institute of Science and Technology, SRM Nagar, 
      Kattankulathur 603 203, Tamil Nadu, India.
FAU - Bol, Ageeth A
AU  - Bol AA
AUID- ORCID: 0000-0002-1259-6265
AD  - Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 
      Eindhoven 5600 MB, The Netherlands.
LA  - eng
PT  - Journal Article
DEP - 20210628
PL  - United States
TA  - ACS Appl Electron Mater
JT  - ACS applied electronic materials
JID - 101734996
PMC - PMC8320240
COIS- The authors declare no competing financial interest.
EDAT- 2021/08/03 06:00
MHDA- 2021/08/03 06:01
PMCR- 2021/07/29
CRDT- 2021/08/02 06:15
PHST- 2021/04/23 00:00 [received]
PHST- 2021/06/11 00:00 [accepted]
PHST- 2021/08/02 06:15 [entrez]
PHST- 2021/08/03 06:00 [pubmed]
PHST- 2021/08/03 06:01 [medline]
PHST- 2021/07/29 00:00 [pmc-release]
AID - 10.1021/acsaelm.1c00379 [doi]
PST - ppublish
SO  - ACS Appl Electron Mater. 2021 Jul 27;3(7):3185-3199. doi: 
      10.1021/acsaelm.1c00379. Epub 2021 Jun 28.