PMID- 34388741 OWN - NLM STAT- PubMed-not-MEDLINE LR - 20210902 IS - 1361-6528 (Electronic) IS - 0957-4484 (Linking) VI - 32 IP - 47 DP - 2021 Sep 2 TI - Modulation of 1 MeV electron irradiation on ultraviolet response in MoS(2)FET. LID - 10.1088/1361-6528/ac1d79 [doi] AB - The material, electrical and ultraviolet optoelectronic properties of few layers bottom molybdenum disulfide (MoS(2)) field effect transistors (FETs) device was investigated before and after 1 MeV electron irradiation. Due to the participation of SiO(2)in conduction, we discovered novel photoelectric properties and a relatively long photogenerated carrier lifetime (several tens of seconds). Electron irradiation causes lattice distortion, the decrease of carrier mobility, and the increase of interface state. It leads to the degradation of output characteristics, transfer characteristics and photocurrent of the MoS(2)FET. CI - (c) 2021 IOP Publishing Ltd. FAU - Li, Heyi AU - Li H AD - Harbin Institute of Technology, Harbin, People's Republic of China. FAU - Liu, Chaoming AU - Liu C AUID- ORCID: 0000-0001-8839-5729 AD - Harbin Institute of Technology, Harbin, People's Republic of China. FAU - Zhang, Yanqing AU - Zhang Y AD - Harbin Institute of Technology, Harbin, People's Republic of China. FAU - Qi, Chunhua AU - Qi C AD - Harbin Institute of Technology, Harbin, People's Republic of China. FAU - Ma, Guoliang AU - Ma G AD - Harbin Institute of Technology, Harbin, People's Republic of China. FAU - Wang, Tianqi AU - Wang T AD - Harbin Institute of Technology, Harbin, People's Republic of China. FAU - Dong, Shangli AU - Dong S AD - Harbin Institute of Technology, Harbin, People's Republic of China. FAU - Huo, Mingxue AU - Huo M AD - Harbin Institute of Technology, Harbin, People's Republic of China. LA - eng PT - Journal Article DEP - 20210902 PL - England TA - Nanotechnology JT - Nanotechnology JID - 101241272 SB - IM OTO - NOTNLM OT - MoS2 OT - PL OT - Raman OT - UV response OT - electron irradiation EDAT- 2021/08/14 06:00 MHDA- 2021/08/14 06:01 CRDT- 2021/08/13 20:25 PHST- 2021/03/31 00:00 [received] PHST- 2021/08/12 00:00 [accepted] PHST- 2021/08/14 06:00 [pubmed] PHST- 2021/08/14 06:01 [medline] PHST- 2021/08/13 20:25 [entrez] AID - 10.1088/1361-6528/ac1d79 [doi] PST - epublish SO - Nanotechnology. 2021 Sep 2;32(47). doi: 10.1088/1361-6528/ac1d79.