PMID- 34424668
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210902
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 13
IP  - 34
DP  - 2021 Sep 1
TI  - Charge-Transfer Effect and Enhanced Photoresponsivity of WS(2)- and MoSe(2)-Based 
      Field Effect Transistors with pi-Conjugated Polyelectrolyte.
PG  - 40880-40890
LID - 10.1021/acsami.1c09386 [doi]
AB  - The characteristics of field effect transistors (FETs) fabricated using 
      two-dimensional (2D) transition-metal dichalcogenides (TMDCs) can be modulated by 
      surface treatment of the active layers. In this study, an ionic pi-conjugated 
      polyelectrolyte, poly(9,9-bis(4'-sulfonatobutyl)fluorene-alt-1,4-phenylene) 
      potassium (FPS-K), was used for the surface treatment of MoSe(2) and WS(2) FETs. 
      The photoluminescence (PL) intensities of monolayer (1L)-MoSe(2) and 1L-WS(2) 
      clearly decreased, and the PL peaks were red-shifted after FPS-K treatment, 
      suggesting a charge-transfer effect. In addition, the n-channel current of both 
      the MoSe(2) and WS(2) FETs increased and the threshold voltage (V(th)) shifted 
      negatively after FPS-K treatment owing to the charge-transfer effect. The 
      photoresponsivity of the MoSe(2) FET under light irradiation (lambda(ex) = 455 nm) 
      increased considerably, from 5300 A W(-1) to approximately 10 000 A W(-1), after 
      FPS-K treatment, and similar behavior was observed in the WS(2) FET. The results 
      can be explained in terms of the increase in electron concentration due to 
      photogating. The external quantum efficiency and photodetectivity of both FETs 
      were also enhanced by the charge-transfer effect resulting from surface treatment 
      with FPS-K containing mobile cations (K(+)) and fixed anions (SO(3)(-)), as well 
      as by the photogating effect. The variation in charge-carrier density due to the 
      photogating and charge-transfer effects is estimated to be approximately 2 x 
      10(12) cm(-2). The results suggest that pi-conjugated polyelectrolytes such as 
      FPS-K can be a promising candidate for the passivation of TMDC-based FETs and 
      obtaining enhanced photoresponsivity.
FAU - Kwon, Dayeong
AU  - Kwon D
AD  - Department of Physics, Korea University, Seoul 02841, Republic of Korea.
FAU - Kim, Jun Young
AU  - Kim JY
AD  - Department of Physics, Korea University, Seoul 02841, Republic of Korea.
FAU - Lee, Sang-Hun
AU  - Lee SH
AD  - Department of Physics, Korea University, Seoul 02841, Republic of Korea.
FAU - Lee, Eunji
AU  - Lee E
AD  - Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of 
      Korea.
FAU - Kim, Jeongyong
AU  - Kim J
AUID- ORCID: 0000-0003-4679-0370
AD  - Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of 
      Korea.
FAU - Harit, Amit Kumar
AU  - Harit AK
AD  - Department of Chemistry, Korea University, Seoul 02841, Republic of Korea.
FAU - Woo, Han Young
AU  - Woo HY
AUID- ORCID: 0000-0001-5650-7482
AD  - Department of Chemistry, Korea University, Seoul 02841, Republic of Korea.
FAU - Joo, Jinsoo
AU  - Joo J
AUID- ORCID: 0000-0002-4008-0071
AD  - Department of Physics, Korea University, Seoul 02841, Republic of Korea.
LA  - eng
PT  - Journal Article
DEP - 20210823
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - charge transfer
OT  - conjugated polyelectrolyte
OT  - field effect transistor
OT  - photogating
OT  - photoresponsivity
OT  - transition-metal dichalcogenide
EDAT- 2021/08/24 06:00
MHDA- 2021/08/24 06:01
CRDT- 2021/08/23 17:26
PHST- 2021/08/24 06:00 [pubmed]
PHST- 2021/08/24 06:01 [medline]
PHST- 2021/08/23 17:26 [entrez]
AID - 10.1021/acsami.1c09386 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2021 Sep 1;13(34):40880-40890. doi: 
      10.1021/acsami.1c09386. Epub 2021 Aug 23.