PMID- 34443842
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20210831
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 11
IP  - 8
DP  - 2021 Aug 5
TI  - Effects of Seed-Layer N(2)O Plasma Treatment on ZnO Nanorod Based Ultraviolet 
      Photodetectors: Experimental Investigation with Two Different Device Structures.
LID - 10.3390/nano11082011 [doi]
LID - 2011
AB  - The crystalline quality of ZnO NR (nanorod) as a sensing material for visible 
      blind ultraviolet PDs (photodetectors) critically depends on the SL (seed layer) 
      material of properties, which is a key to high-quality nanocrystallite growth, 
      more so than the synthesis method. In this study, we fabricated two different 
      device structures of a gateless AlGaN/GaN HEMT (high electron mobility 
      transistor) and a photoconductive PD structure with an IDE (interdigitated 
      electrode) pattern implemented on a PET (polyethylene terephthalate) flexible 
      substrate, and investigated the impact on device performance through the SL N(2)O 
      plasma treatment. In case of HEMT-based PD, the highest current on-off ratio (~7) 
      and spectral responsivity R (~1.5 x 10(5) A/W) were obtained from the treatment 
      for 6 min, whereas the IDE pattern-based PD showed the best performance (on-off 
      ratio = ~44, R = ~69 A/W) from the treatment for 3 min and above, during which a 
      significant etch damage on PET substrates was produced. This improvement in 
      device performance was due to the enhancement in NR crystalline quality as 
      revealed by our X-ray diffraction, photoluminescence, and microanalysis.
FAU - Lee, Seungmin
AU  - Lee S
AUID- ORCID: 0000-0002-5808-2366
AD  - Division of Electronics and Electrical Engineering, Dongguk University, Seoul 
      100715, Korea.
FAU - Nam, Kiyun
AU  - Nam K
AD  - Division of Electronics and Electrical Engineering, Dongguk University, Seoul 
      100715, Korea.
FAU - Kim, Jae Hyun
AU  - Kim JH
AD  - Division of Electronics and Electrical Engineering, Dongguk University, Seoul 
      100715, Korea.
FAU - Hong, Gi Young
AU  - Hong GY
AD  - Division of Electronics and Electrical Engineering, Dongguk University, Seoul 
      100715, Korea.
FAU - Kim, Sam-Dong
AU  - Kim SD
AUID- ORCID: 0000-0002-4482-5464
AD  - Division of Electronics and Electrical Engineering, Dongguk University, Seoul 
      100715, Korea.
LA  - eng
GR  - 2019R1A2C2086747/National Research Foundation of Korea/
PT  - Journal Article
DEP - 20210805
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC8398532
OTO - NOTNLM
OT  - N2O plasma treatment
OT  - ZnO nanorods
OT  - high electron mobility transistor
OT  - interdigitated electrode
OT  - ultraviolet photodetectors
COIS- The authors declare no conflict of interest.
EDAT- 2021/08/28 06:00
MHDA- 2021/08/28 06:01
PMCR- 2021/08/05
CRDT- 2021/08/27 01:17
PHST- 2021/07/12 00:00 [received]
PHST- 2021/07/30 00:00 [revised]
PHST- 2021/08/03 00:00 [accepted]
PHST- 2021/08/27 01:17 [entrez]
PHST- 2021/08/28 06:00 [pubmed]
PHST- 2021/08/28 06:01 [medline]
PHST- 2021/08/05 00:00 [pmc-release]
AID - nano11082011 [pii]
AID - nanomaterials-11-02011 [pii]
AID - 10.3390/nano11082011 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2021 Aug 5;11(8):2011. doi: 10.3390/nano11082011.