PMID- 34683785
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20211026
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 14
IP  - 20
DP  - 2021 Oct 18
TI  - A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility 
      Transistor.
LID - 10.3390/ma14206193 [doi]
LID - 6193
AB  - A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a 
      terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this 
      paper. The structure of the epitaxial layer material in the detector is 
      optimized, and the performance of the GaN HEMT THz detector is improved. The 
      maximum responsivity of 10 kV/W and minimum noise equivalent power (NEP) of 15.5 
      pW/Hz(0.5) are obtained at the radiation frequency of 315 GHz. The results are 
      comparable to and even more promising than the reported single-channel (SC) GaN 
      HEMT detectors. The enhancement of THz response and the reduction of NEP of the 
      DC GaN HEMT detector mainly results from the interaction of 2DEG in the upper and 
      lower channels, which improves the self-mixing effect of the detector. The 
      promising experimental results mean that the proposed DC GaN/AlGaN HEMT THz 
      detector is capable of the practical applications of THz detection.
FAU - Meng, Qingzhi
AU  - Meng Q
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
FAU - Lin, Qijing
AU  - Lin Q
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
AD  - Collaborative Innovation Center of High-End State Key Manufacturing Equipment, 
      Xi'an Jiaotong University, Xi'an 710054, China.
AD  - School of Mechanical and Manufacturing Engineering, Xiamen Institute of 
      Technology, Xiamen 361021, China.
AD  - Chongqing Technology and Business University, Nan'an District, Chongqing 400067, 
      China.
FAU - Han, Feng
AU  - Han F
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
AD  - Collaborative Innovation Center of High-End State Key Manufacturing Equipment, 
      Xi'an Jiaotong University, Xi'an 710054, China.
FAU - Jing, Weixuan
AU  - Jing W
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
FAU - Wang, Yangtao
AU  - Wang Y
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
FAU - Jiang, Zhuangde
AU  - Jiang Z
AD  - State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an 
      Jiaotong University, Xi'an 710049, China.
AD  - Collaborative Innovation Center of High-End State Key Manufacturing Equipment, 
      Xi'an Jiaotong University, Xi'an 710054, China.
LA  - eng
GR  - No. 51805421, No. 51890884, No. 91748207/National Natural Science Foundation of 
      China/
GR  - No. 2018T111045/China Postdoctoral Science Foundation/
PT  - Journal Article
DEP - 20211018
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC8539176
OTO - NOTNLM
OT  - double-channel
OT  - high-electron-mobility transistor
OT  - noise equivalent power
OT  - responsivity
OT  - terahertz detector
COIS- The authors declare no conflict of interest.
EDAT- 2021/10/24 06:00
MHDA- 2021/10/24 06:01
PMCR- 2021/10/18
CRDT- 2021/10/23 01:16
PHST- 2021/09/15 00:00 [received]
PHST- 2021/10/10 00:00 [revised]
PHST- 2021/10/16 00:00 [accepted]
PHST- 2021/10/23 01:16 [entrez]
PHST- 2021/10/24 06:00 [pubmed]
PHST- 2021/10/24 06:01 [medline]
PHST- 2021/10/18 00:00 [pmc-release]
AID - ma14206193 [pii]
AID - materials-14-06193 [pii]
AID - 10.3390/ma14206193 [doi]
PST - epublish
SO  - Materials (Basel). 2021 Oct 18;14(20):6193. doi: 10.3390/ma14206193.