PMID- 34728721
OWN - NLM
STAT- MEDLINE
DCOM- 20220125
LR  - 20220125
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 11
IP  - 1
DP  - 2021 Nov 2
TI  - Self-powered bifunctional sensor based on tribotronic planar graphene 
      transistors.
PG  - 21483
LID - 10.1038/s41598-021-01011-0 [doi]
LID - 21483
AB  - With the development of material science, micro-nano-fabrication 
      and microelectronics, the higher level requirements are posed on the electronic 
      skins (E-skin). The lower energy consumption and multiple functions are the 
      imperative requirements to spurred scientists and mechanists to make joint 
      efforts to meet. To achieve lower energy consumption, a promising 
      energy-harvesting style of triboelectric nanogenerators (TENG) is incorporated 
      into the field effect transistors (FETs) to play the important role for sensor. 
      For bifunctional sensor, to harness the difficult for reflecting the magnitude of 
      frequency, we resorted to synaptic transistors to achieve more 
      intelligentization. Furthermore, with regards to the configuration of FET, we 
      continued previous work: using the electrolyte gate dielectrics of FET-ion gel as 
      the electrification layer to achieve high efficient, compact and extensively 
      adoption for mechanosensation. The working principle of the GFET was based on the 
      coupling effects of the FET and the TENG. This newly emerged self-powered sensor 
      would offer a new platform for lower power consumption sensor for human-machine 
      interface and intelligent robot.
CI  - (c) 2021. The Author(s).
FAU - Meng, Yanfang
AU  - Meng Y
AD  - State Key Laboratory of Advanced Optical Communications System and Networks, 
      School of Electronics Engineering and Computer Science, Peking University, 
      Beijing, 100871, China. yanaimengmeng@126.com.
AD  - Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, 
      China. yanaimengmeng@126.com.
FAU - Gao, Guoyun
AU  - Gao G
AD  - School of Physics, University of Hong Kong, Zhuangyueming Physical Building, Hong 
      Kong, 999077, China.
FAU - Zhu, Jiaxue
AU  - Zhu J
AD  - Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of 
      Microelectronics of the Chinese Academy of Sciences, Beitucheng West Road, 
      Beijing, 100029, China.
LA  - eng
PT  - Journal Article
DEP - 20211102
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
RN  - 7782-42-5 (Graphite)
SB  - IM
MH  - Biosensing Techniques/*instrumentation
MH  - *Electric Conductivity
MH  - Electric Power Supplies/*statistics & numerical data
MH  - Graphite/*chemistry
MH  - Humans
MH  - Nanotechnology/*instrumentation
MH  - Transistors, Electronic/*statistics & numerical data
MH  - *Wearable Electronic Devices
PMC - PMC8563961
COIS- The authors declare no competing interests.
EDAT- 2021/11/04 06:00
MHDA- 2022/01/27 06:00
PMCR- 2021/11/02
CRDT- 2021/11/03 06:33
PHST- 2021/09/10 00:00 [received]
PHST- 2021/10/13 00:00 [accepted]
PHST- 2021/11/03 06:33 [entrez]
PHST- 2021/11/04 06:00 [pubmed]
PHST- 2022/01/27 06:00 [medline]
PHST- 2021/11/02 00:00 [pmc-release]
AID - 10.1038/s41598-021-01011-0 [pii]
AID - 1011 [pii]
AID - 10.1038/s41598-021-01011-0 [doi]
PST - epublish
SO  - Sci Rep. 2021 Nov 2;11(1):21483. doi: 10.1038/s41598-021-01011-0.