PMID- 34770260
OWN - NLM
STAT- MEDLINE
DCOM- 20211116
LR  - 20211118
IS  - 1424-8220 (Electronic)
IS  - 1424-8220 (Linking)
VI  - 21
IP  - 21
DP  - 2021 Oct 20
TI  - Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the 
      Standard 180 nm CMOS Technology.
LID - 10.3390/s21216953 [doi]
LID - 6953
AB  - A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm 
      complementary metal oxide semiconductor (CMOS) technology. The MS designs two 
      magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to 
      reduce cross-sensitivity. The x/y-MSE is constructed by an x-MSE and an y-MSE 
      that are respectively employed to detect in the x- and y-direction magnetic field 
      (MF). The z-MSE is used to sense in the z-direction MF. The x/y-MSE, which is 
      constructed by two magnetotransistors, designs four additional collectors that 
      are employed to increase the sensing current and to enhance the sensitivity of 
      the MS. The Sentaurus TCAD software simulates the characteristic of the MS. The 
      measured results reveal that the MS sensitivity is 534 mV/T in the x-direction 
      MF, 525 mV/T in the y-direction MF and 119 mV/T in the z-axis MF.
FAU - Wu, Chi-Han
AU  - Wu CH
AD  - Department of Mechanical Engineering, National Chung Hsing University, Taichung 
      402, Taiwan.
FAU - Shih, Po-Jen
AU  - Shih PJ
AUID- ORCID: 0000-0002-8726-9998
AD  - Department of Biomedical Engineering, National Taiwan University, Taipei 106, 
      Taiwan.
FAU - Tsai, Yao-Chuan
AU  - Tsai YC
AUID- ORCID: 0000-0003-2992-8614
AD  - Department of Bio-Industrial Mechatronics Engineering, National Chung Hsing 
      University, Taichung 402, Taiwan.
FAU - Dai, Ching-Liang
AU  - Dai CL
AD  - Department of Mechanical Engineering, National Chung Hsing University, Taichung 
      402, Taiwan.
LA  - eng
GR  - MOST 110-2221-E-005-047/Ministry of Science and Technology, Taiwan/
PT  - Journal Article
DEP - 20211020
PL  - Switzerland
TA  - Sensors (Basel)
JT  - Sensors (Basel, Switzerland)
JID - 101204366
RN  - 0 (Oxides)
SB  - IM
MH  - Magnetic Fields
MH  - *Oxides
MH  - *Semiconductors
MH  - Software
MH  - Technology
PMC - PMC8587165
OTO - NOTNLM
OT  - CMOS
OT  - MEMS
OT  - high sensitivity
OT  - micro magnetic sensor
OT  - three-axis sensing
COIS- The authors declare no conflict of interest.
EDAT- 2021/11/14 06:00
MHDA- 2021/11/17 06:00
PMCR- 2021/10/20
CRDT- 2021/11/13 01:10
PHST- 2021/08/25 00:00 [received]
PHST- 2021/10/14 00:00 [revised]
PHST- 2021/10/18 00:00 [accepted]
PHST- 2021/11/13 01:10 [entrez]
PHST- 2021/11/14 06:00 [pubmed]
PHST- 2021/11/17 06:00 [medline]
PHST- 2021/10/20 00:00 [pmc-release]
AID - s21216953 [pii]
AID - sensors-21-06953 [pii]
AID - 10.3390/s21216953 [doi]
PST - epublish
SO  - Sensors (Basel). 2021 Oct 20;21(21):6953. doi: 10.3390/s21216953.