PMID- 34792331
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20211216
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 13
IP  - 49
DP  - 2021 Dec 15
TI  - Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN 
      Epitaxial Wafer for High-Performance Radio Frequency Applications.
PG  - 59440-59449
LID - 10.1021/acsami.1c15970 [doi]
AB  - While two-dimensional (2D) hexagonal boron nitride (h-BN) is emerging as an 
      atomically thin and dangling bond-free insulating layer for next-generation 
      electronics and optoelectronics, its practical implementation into miniaturized 
      integrated circuits has been significantly limited due to difficulties in 
      large-scale growth directly on epitaxial semiconductor wafers. Herein, the 
      realization of a wafer-scale h-BN van der Waals heterostructure with a 2 in. 
      AlGaN/GaN high-electron mobility transistor (HEMT) wafer using metal-organic 
      chemical vapor deposition is presented. The combination of state-of-the-art 
      microscopic and spectroscopic analyses and theoretical calculations reveals that 
      the heterointerface between  approximately 2.5 nm-thick h-BN and AlGaN layers is atomically 
      sharp and exhibits a very weak van der Waals interaction without formation of a 
      ternary or quaternary alloy that can induce undesired degradation of device 
      performance. The fabricated AlGaN/GaN HEMT with h-BN shows very promising 
      performance including a cutoff frequency (f(T)) and maximum oscillation frequency 
      (f(MAX)) as high as 28 and 88 GHz, respectively, enabled by an effective 
      passivation of surface defects on the HEMT wafer to deliver accurate information 
      with minimized power loss. These findings pave the way for practical 
      implementation of 2D materials integrated with conventional microelectronic 
      devices and the realization of future all-2D electronics.
FAU - Moon, Seokho
AU  - Moon S
AUID- ORCID: 0000-0001-5585-5848
AD  - Department of Materials Science and Engineering, Pohang University of Science and 
      Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, Republic of Korea.
FAU - Chang, Sung-Jae
AU  - Chang SJ
AD  - DMC Convergence Research Department, Electronics and Telecommunications Research 
      Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea.
FAU - Kim, Youngjae
AU  - Kim Y
AUID- ORCID: 0000-0002-4544-2940
AD  - Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science 
      and Technology (DGIST), 333 Techno jungang-daero, Dalseong-gun, Daegu 42988, 
      Republic of Korea.
FAU - Okello, Odongo Francis Ngome
AU  - Okello OFN
AD  - Department of Materials Science and Engineering, Pohang University of Science and 
      Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, Republic of Korea.
FAU - Kim, Jiye
AU  - Kim J
AD  - Department of Materials Science and Engineering, Pohang University of Science and 
      Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, Republic of Korea.
FAU - Kim, Jaewon
AU  - Kim J
AD  - Department of Materials Science and Engineering, Pohang University of Science and 
      Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, Republic of Korea.
FAU - Jung, Hyun-Wook
AU  - Jung HW
AD  - DMC Convergence Research Department, Electronics and Telecommunications Research 
      Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea.
FAU - Ahn, Ho-Kyun
AU  - Ahn HK
AD  - DMC Convergence Research Department, Electronics and Telecommunications Research 
      Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea.
FAU - Kim, Dong-Seok
AU  - Kim DS
AD  - Korea Multi-Purpose Accelerator Complex, Korea Atomic Energy Research Institute 
      (KAERI), 181 Mirae-ro, Geoncheon-eup, Gyeongju 38180, Republic of Korea.
FAU - Choi, Si-Young
AU  - Choi SY
AUID- ORCID: 0000-0003-1648-142X
AD  - Department of Materials Science and Engineering, Pohang University of Science and 
      Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, Republic of Korea.
FAU - Lee, JaeDong
AU  - Lee J
AD  - Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science 
      and Technology (DGIST), 333 Techno jungang-daero, Dalseong-gun, Daegu 42988, 
      Republic of Korea.
FAU - Lim, Jong-Won
AU  - Lim JW
AD  - DMC Convergence Research Department, Electronics and Telecommunications Research 
      Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea.
FAU - Kim, Jong Kyu
AU  - Kim JK
AUID- ORCID: 0000-0003-1643-384X
AD  - Department of Materials Science and Engineering, Pohang University of Science and 
      Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, Republic of Korea.
LA  - eng
PT  - Journal Article
DEP - 20211118
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - III-nitrides
OT  - hexagonal boron nitrides
OT  - high-electron mobility transistors
OT  - metal-organic chemical vapor deposition
OT  - two-dimensional materials
EDAT- 2021/11/19 06:00
MHDA- 2021/11/19 06:01
CRDT- 2021/11/18 12:12
PHST- 2021/11/19 06:00 [pubmed]
PHST- 2021/11/19 06:01 [medline]
PHST- 2021/11/18 12:12 [entrez]
AID - 10.1021/acsami.1c15970 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2021 Dec 15;13(49):59440-59449. doi: 
      10.1021/acsami.1c15970. Epub 2021 Nov 18.