PMID- 34807094
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20211123
IS  - 1539-4522 (Electronic)
IS  - 1559-128X (Linking)
VI  - 60
IP  - 30
DP  - 2021 Oct 20
TI  - Design of a terahertz dual-channel modulator based on metamaterials.
PG  - 9519-9524
LID - 10.1364/AO.440152 [doi]
AB  - In this paper, we propose a terahertz dual-channel modulator by combining a high 
      electron mobility transistor (HEMT) with a metamaterials structure, in which the 
      HEMT is embedded in the opening of the structure metamaterial. The modulator 
      consists of a metamaterial structure, silicon carbide (SiC), HEMT active device, 
      and feeder. The concentration of the two-dimensional electron gas (2DEG) in the 
      HEMT can be controlled by gate voltages, and the change of the concentration can 
      realize the modulation of the intensity and phase of the terahertz wave. The 
      simulation results indicate that when a single channel works, the modulation 
      depth is 90.7% at 0.22 THz and 94.0% at 0.34 THz. When both channels work, the 
      modulation depth is 88.9% at 0.22 THz and 93.3% at 0.34 THz. The terahertz 
      modulator designed in this paper can work in two frequency bands and can be 
      controlled independently, which efficiently uses the spectrum resources and has 
      broad application prospects in the field of terahertz communication.
FAU - Pan, Wu
AU  - Pan W
FAU - Yang, Longliang
AU  - Yang L
FAU - Ma, Yong
AU  - Ma Y
FAU - Xiao, Huiyun
AU  - Xiao H
FAU - Liu, Bowen
AU  - Liu B
LA  - eng
PT  - Journal Article
PL  - United States
TA  - Appl Opt
JT  - Applied optics
JID - 0247660
SB  - IM
EDAT- 2021/11/23 06:00
MHDA- 2021/11/23 06:01
CRDT- 2021/11/22 12:17
PHST- 2021/11/22 12:17 [entrez]
PHST- 2021/11/23 06:00 [pubmed]
PHST- 2021/11/23 06:01 [medline]
AID - 460604 [pii]
AID - 10.1364/AO.440152 [doi]
PST - ppublish
SO  - Appl Opt. 2021 Oct 20;60(30):9519-9524. doi: 10.1364/AO.440152.