PMID- 34809427
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20211209
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 13
IP  - 48
DP  - 2021 Dec 8
TI  - Spontaneous n-Doping in Growing Monolayer MoS(2) by Alkali Metal 
      Compound-Promoted CVD.
PG  - 58144-58151
LID - 10.1021/acsami.1c17409 [doi]
AB  - Monolayer MoS(2) has emerged as one of the most promising candidate materials for 
      future semiconductor devices because of its fascinating physical properties and 
      optoelectronic performance. Recently, the utilization of alkali metal compounds 
      as promoters in CVD growth has been demonstrated to be a facile strategy for 
      growing monolayer MoS(2) and other 2D TMDs with large domain sizes. In this work, 
      we systematically investigated the residues derived from alkali metal compounds 
      and the spontaneous n-doping effect on monolayer MoS(2) in alkali metal 
      compound-promoted CVD growth. When using NaOH and other alkali metal compounds as 
      promoters, it is found that the Raman peak of the A(1g) mode red shifted with a 
      broadening width and the PL intensity of the A peak decreased with a red shift, 
      which was attributed to the spontaneous n-doping effect during growth. Moreover, 
      the growth using varying amounts of NaOH promoter suggests that the n-doping 
      level could be controlled by the amount of promoter. X-ray photoelectron 
      spectroscopy (XPS) and time-of-flight secondary-ion mass spectroscopy (TOF-SIMS) 
      showed the existence of cation-derived residues in the form of a Na-O cluster 
      physiosorbed on top of monolayer MoS(2), which was also confirmed by the transfer 
      experiment. The NaOH treatment experiment and density functional theory (DFT) 
      calculations demonstrate that sodium hydroxide clusters, which could be converted 
      from a combination of Na-O clusters and water vapor, could produce an n-doping 
      effect on monolayer MoS(2). This study provides a facile route to controllably 
      grow monolayer 2D materials with a desired doping level without further 
      treatment.
FAU - Wang, Peng
AU  - Wang P
AD  - Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano 
      Optoelectronic Information System, Ministry of Industry and Information 
      Technology, Key Laboratory of Micro-Optics and Photonic Technology of 
      Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China.
FAU - Qu, Jiafan
AU  - Qu J
AD  - Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano 
      Optoelectronic Information System, Ministry of Industry and Information 
      Technology, Key Laboratory of Micro-Optics and Photonic Technology of 
      Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China.
FAU - Wei, Yadong
AU  - Wei Y
AD  - School of Materials Science and Engineering, Harbin Institute of Technology, 
      Harbin 150001, China.
FAU - Shi, Hongyan
AU  - Shi H
AD  - Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano 
      Optoelectronic Information System, Ministry of Industry and Information 
      Technology, Key Laboratory of Micro-Optics and Photonic Technology of 
      Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China.
AD  - Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 
      030006, China.
FAU - Wang, Jian
AU  - Wang J
AD  - Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano 
      Optoelectronic Information System, Ministry of Industry and Information 
      Technology, Key Laboratory of Micro-Optics and Photonic Technology of 
      Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China.
FAU - Sun, Xiudong
AU  - Sun X
AD  - Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano 
      Optoelectronic Information System, Ministry of Industry and Information 
      Technology, Key Laboratory of Micro-Optics and Photonic Technology of 
      Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China.
AD  - Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 
      030006, China.
FAU - Li, Weiqi
AU  - Li W
AUID- ORCID: 0000-0002-9100-2823
AD  - School of Physics, Harbin Institute of Technology, Harbin 150001, China.
FAU - Liu, Wenjun
AU  - Liu W
AD  - School of Physics, Harbin Institute of Technology at Weihai, Weihai 264209, 
      China.
FAU - Gao, Bo
AU  - Gao B
AUID- ORCID: 0000-0002-6670-0232
AD  - Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano 
      Optoelectronic Information System, Ministry of Industry and Information 
      Technology, Key Laboratory of Micro-Optics and Photonic Technology of 
      Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China.
AD  - Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 
      030006, China.
LA  - eng
PT  - Journal Article
DEP - 20211122
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - CVD growth
OT  - alkali metal compounds
OT  - density functional theory
OT  - monolayer molybdenum disulfide
OT  - spontaneous n-doping
EDAT- 2021/11/24 06:00
MHDA- 2021/11/24 06:01
CRDT- 2021/11/23 05:26
PHST- 2021/11/24 06:00 [pubmed]
PHST- 2021/11/24 06:01 [medline]
PHST- 2021/11/23 05:26 [entrez]
AID - 10.1021/acsami.1c17409 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2021 Dec 8;13(48):58144-58151. doi: 
      10.1021/acsami.1c17409. Epub 2021 Nov 22.