PMID- 34832077
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20211130
IS  - 2077-0375 (Print)
IS  - 2077-0375 (Electronic)
IS  - 2077-0375 (Linking)
VI  - 11
IP  - 11
DP  - 2021 Oct 30
TI  - Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on 
      High-Heat Dissipation Poly-AlN Substrates.
LID - 10.3390/membranes11110848 [doi]
LID - 848
AB  - In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown 
      through metal organic chemical vapor deposition on a Qromis Substrate Technology 
      (QST). The GaN on the QST device exhibited a superior heat dissipation 
      performance to the GaN on a Si device because of the higher thermal conductivity 
      of the QST substrate. Thermal imaging analysis indicated that the temperature 
      variation of the GaN on the QST device was 4.5  degrees C and that of the GaN on the Si 
      device was 9.2  degrees C at a drain-to-source current (I(DS)) of 300 mA/mm following 50 
      s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST 
      device exhibited a lower I(DS) degradation at high temperatures (17.5% at 400 K). 
      The QST substrate is suitable for employment in different temperature 
      environments because of its high thermal stability.
FAU - Huang, Chong-Rong
AU  - Huang CR
AD  - Department of Electronics Engineering, Chang Gung University, Taoyuan 333, 
      Taiwan.
FAU - Chiu, Hsien-Chin
AU  - Chiu HC
AUID- ORCID: 0000-0003-1068-5798
AD  - Department of Electronics Engineering, Chang Gung University, Taoyuan 333, 
      Taiwan.
AD  - Department of Radiation Oncology, Chang Gung Memorial Hospital, Chang Gung 
      University, Taoyuan 333, Taiwan.
FAU - Liu, Chia-Hao
AU  - Liu CH
AD  - Department of Electronics Engineering, Chang Gung University, Taoyuan 333, 
      Taiwan.
FAU - Wang, Hsiang-Chun
AU  - Wang HC
AD  - Department of Electronics Engineering, Chang Gung University, Taoyuan 333, 
      Taiwan.
FAU - Kao, Hsuan-Ling
AU  - Kao HL
AUID- ORCID: 0000-0001-9448-9908
AD  - Department of Electronics Engineering, Chang Gung University, Taoyuan 333, 
      Taiwan.
FAU - Chen, Chih-Tien
AU  - Chen CT
AD  - National Chung-Shan Institute of Science and Technology, Materials and 
      Electro-Optics Research Division, Taoyuan 333, Taiwan.
FAU - Chang, Kuo-Jen
AU  - Chang KJ
AD  - National Chung-Shan Institute of Science and Technology, Materials and 
      Electro-Optics Research Division, Taoyuan 333, Taiwan.
LA  - eng
PT  - Journal Article
DEP - 20211030
PL  - Switzerland
TA  - Membranes (Basel)
JT  - Membranes
JID - 101577807
PMC - PMC8623141
OTO - NOTNLM
OT  - QST substrate
OT  - back-barrier layer
OT  - high thermal conductivity
COIS- The authors declare no conflict of interest.
EDAT- 2021/11/28 06:00
MHDA- 2021/11/28 06:01
PMCR- 2021/10/30
CRDT- 2021/11/27 01:17
PHST- 2021/09/28 00:00 [received]
PHST- 2021/10/26 00:00 [revised]
PHST- 2021/10/27 00:00 [accepted]
PHST- 2021/11/27 01:17 [entrez]
PHST- 2021/11/28 06:00 [pubmed]
PHST- 2021/11/28 06:01 [medline]
PHST- 2021/10/30 00:00 [pmc-release]
AID - membranes11110848 [pii]
AID - membranes-11-00848 [pii]
AID - 10.3390/membranes11110848 [doi]
PST - epublish
SO  - Membranes (Basel). 2021 Oct 30;11(11):848. doi: 10.3390/membranes11110848.