PMID- 34832730
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20211130
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 12
IP  - 11
DP  - 2021 Oct 27
TI  - Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of 
      Breakdown Voltage.
LID - 10.3390/mi12111318 [doi]
LID - 1318
AB  - In this paper, we introduce a new type of AlGaN/GaN high electron mobility 
      transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS 
      two-dimensional numerical simulation to calculate the performance of conventional 
      HEMT and HEMT with micro-FP and analyze its principle. By studying a new charge 
      balance method provided by HEMTs and micro-FPs, the physical mechanism of FP 
      adjusting the HEMT potential distribution and channel electric field distribution 
      is analyzed. The new FP structure consists of a drain field plate (D-FP), a 
      source field plate (S-FP) and several micro-gate field plates (G-FP) to improve 
      the output characteristics of HEMTs. By adjusting the distribution of potential 
      and channel electric field, a wider and more uniform channel electric field can 
      be obtained, and the breakdown voltage can be increased to 1278 V. Although the 
      on-resistance of the HEMT is slightly increased to 5.24 Omega mm, it is still lower 
      than other reference values. These results may open up a new and effective method 
      for manufacturing high-power devices for power electronics applications.
FAU - Xia, Xiaoyu
AU  - Xia X
AUID- ORCID: 0000-0001-7405-8385
AD  - Institute of Semiconductors Science and Technology, South China Normal 
      University, Guangzhou 510631, China.
FAU - Guo, Zhiyou
AU  - Guo Z
AD  - Institute of Semiconductors Science and Technology, South China Normal 
      University, Guangzhou 510631, China.
FAU - Sun, Huiqing
AU  - Sun H
AD  - Institute of Semiconductors Science and Technology, South China Normal 
      University, Guangzhou 510631, China.
LA  - eng
GR  - 2019B010128002/Key-Area Research and Development Programof Guangdong Province/
GR  - 2020B010171002/Key-Area Research and Development Programof Guangdong Province/
GR  - 1920001000724/Foshan Science and Technology Bureau/
GR  - 2019KTSCX084/Guangdong Science and Technology Project/
GR  - 201807010083/Guangzhou Science and Technology Program Key Projects/
PT  - Journal Article
DEP - 20211027
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC8623632
OTO - NOTNLM
OT  - GaN HEMT
OT  - breakdown voltage
OT  - field plate
OT  - normally-off
COIS- The authors declare no conflict of interest.
EDAT- 2021/11/28 06:00
MHDA- 2021/11/28 06:01
PMCR- 2021/10/27
CRDT- 2021/11/27 01:19
PHST- 2021/09/26 00:00 [received]
PHST- 2021/10/18 00:00 [revised]
PHST- 2021/10/25 00:00 [accepted]
PHST- 2021/11/27 01:19 [entrez]
PHST- 2021/11/28 06:00 [pubmed]
PHST- 2021/11/28 06:01 [medline]
PHST- 2021/10/27 00:00 [pmc-release]
AID - mi12111318 [pii]
AID - micromachines-12-01318 [pii]
AID - 10.3390/mi12111318 [doi]
PST - epublish
SO  - Micromachines (Basel). 2021 Oct 27;12(11):1318. doi: 10.3390/mi12111318.