PMID- 34832824
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20211130
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 12
IP  - 11
DP  - 2021 Nov 18
TI  - Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT.
LID - 10.3390/mi12111413 [doi]
LID - 1413
AB  - A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high 
      electron mobility transistor (HEMT) is presented in this paper. The size of an 
      InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive 
      structure is fabricated by molecular beam epitaxy (MBE). The force-sensitivity 
      characteristic of the QD HEMT is studied by the electrical and mechanical 
      properties. The electrical characteristics show that the InAs QD-HEMT has linear, 
      cut-off, and saturation operating states, and produces different output currents 
      under different gate voltages, which shows that the structure is reasonable. 
      Furthermore, the results of the output characteristics under different pressure 
      show that the output voltage of the QD-HEMT decreases with the increase in 
      pressure, which indicates that the InAs QD-HEMT has a vital mechanical-electrical 
      coupling characteristic. The output voltage of the InAs QD-HEMT in the range of 
      0-100 kPa shows that the sensitivity was 1.09 mV/kPa.
FAU - Wang, Rui-Rong
AU  - Wang RR
AD  - Key Laboratory of Instrumentation Science and Dynamic Measurement, Shanxi 
      Province Key Laboratory of Quantum Sensing and Precision Measurement, School of 
      Instrument and Electronics, North University of China, Taiyuan 030051, China.
AD  - Department of Electronic Engineering, Taiyuan Institute of Technology, Taiyuan 
      030008, China.
FAU - Guo, Hao
AU  - Guo H
AD  - Key Laboratory of Instrumentation Science and Dynamic Measurement, Shanxi 
      Province Key Laboratory of Quantum Sensing and Precision Measurement, School of 
      Instrument and Electronics, North University of China, Taiyuan 030051, China.
FAU - Tang, Jun
AU  - Tang J
AD  - Key Laboratory of Instrumentation Science and Dynamic Measurement, Shanxi 
      Province Key Laboratory of Quantum Sensing and Precision Measurement, School of 
      Instrument and Electronics, North University of China, Taiyuan 030051, China.
FAU - Liu, Jin-Ping
AU  - Liu JP
AD  - Key Laboratory of Instrumentation Science and Dynamic Measurement, Shanxi 
      Province Key Laboratory of Quantum Sensing and Precision Measurement, School of 
      Instrument and Electronics, North University of China, Taiyuan 030051, China.
FAU - Liu, Li-Shuang
AU  - Liu LS
AD  - Key Laboratory of Instrumentation Science and Dynamic Measurement, Shanxi 
      Province Key Laboratory of Quantum Sensing and Precision Measurement, School of 
      Instrument and Electronics, North University of China, Taiyuan 030051, China.
LA  - eng
GR  - 51775522/National Natural Science Foundation of China/
GR  - 2020L0638/Scientific and Technologial Innovation Programs of Higher Education 
      Institutions in Shanxi/
GR  - 201905D121001/Shanxi province key laboratory of quantum sensing and precision 
      measurement/
GR  - 201901D211203/Applied Basic Research Program in Shanxi Province/
PT  - Journal Article
DEP - 20211118
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC8619353
OTO - NOTNLM
OT  - HEMT
OT  - InAs QD
OT  - force-sensitive
COIS- The authors declare that they have no conflict of interest.
EDAT- 2021/11/28 06:00
MHDA- 2021/11/28 06:01
PMCR- 2021/11/18
CRDT- 2021/11/27 01:19
PHST- 2021/10/14 00:00 [received]
PHST- 2021/11/04 00:00 [revised]
PHST- 2021/11/15 00:00 [accepted]
PHST- 2021/11/27 01:19 [entrez]
PHST- 2021/11/28 06:00 [pubmed]
PHST- 2021/11/28 06:01 [medline]
PHST- 2021/11/18 00:00 [pmc-release]
AID - mi12111413 [pii]
AID - micromachines-12-01413 [pii]
AID - 10.3390/mi12111413 [doi]
PST - epublish
SO  - Micromachines (Basel). 2021 Nov 18;12(11):1413. doi: 10.3390/mi12111413.