PMID- 34835809
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20211130
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 11
IP  - 11
DP  - 2021 Nov 12
TI  - 32 x 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for 
      Submarine Optical Communication.
LID - 10.3390/nano11113045 [doi]
LID - 3045
AB  - This work proposes the use of integrated high-power InGaN/GaN 
      multiple-quantum-well flip-chip blue micro light-emitting diode (mu-LED) arrays on 
      an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a 
      high electron mobility transistor (HEMT), for various applications: underwater 
      wireless optical communication (UWOC) and smart lighting. Therefore, we 
      demonstrate high-power mu-LED-on-HEMT arrays that consist of 32 x 32 pixelated 
      mu-LED arrays and 32 x 32 pixelated HEMT arrays and that are interconnected by a 
      solder bump bonding technique. Each pixel of the mu-LED arrays emits light in the 
      HEMT on-state. The threshold voltage, the off-state leakage current, and the 
      drain current of the HEMT arrays are -4.6 V, <~1.1 x 10(-9) A at gate-to-source 
      voltage (V(GS)) = -10 V, and 21 mA at V(GS) = 4 V, respectively. At 12 mA, the 
      forward voltage and the light output power (LOP) of mu-LED arrays are ~4.05 V and 
      ~3.5 mW, respectively. The LOP of the integrated mu-LED-on-HEMT arrays increases 
      from 0 to ~4 mW as the V(GS) increases from -6 to 4 V at V(DD) = 10 V. Each pixel 
      of the integrated mu-LEDs exhibits a modulated high LOP at a peak wavelength of 
      ~450 nm, showing their potential as candidates for use in UWOC.
FAU - Kim, Tae Kyoung
AU  - Kim TK
AD  - Department of Energy Technology, Korea Institute of Energy Technology, Ujeong-ro, 
      72, Naju-si 58330, Korea.
FAU - Islam, Abu Bashar Mohammad Hamidul
AU  - Islam ABMH
AUID- ORCID: 0000-0002-9354-1521
AD  - Department of Energy Technology, Korea Institute of Energy Technology, Ujeong-ro, 
      72, Naju-si 58330, Korea.
FAU - Cha, Yu-Jung
AU  - Cha YJ
AD  - Department of Energy Technology, Korea Institute of Energy Technology, Ujeong-ro, 
      72, Naju-si 58330, Korea.
FAU - Kwak, Joon Seop
AU  - Kwak JS
AUID- ORCID: 0000-0002-1706-7258
AD  - Department of Energy Technology, Korea Institute of Energy Technology, Ujeong-ro, 
      72, Naju-si 58330, Korea.
LA  - eng
GR  - 2021M3D1A2048623/Nano-Material Technology Development Program through the 
      National Research Foundation of Korea (NRF) funded by Ministry of Science and 
      ICT/
GR  - 2020M3H4A1A02084899/National Research Foundation of Korea grant funded by the 
      Korean government (MSIT)/
GR  - 20004946/Korea Evaluation Institute of Industrial Technology (Development of 
      light source and frontplane technology for ultra-high resolution pixels over 50k 
      nits)/
PT  - Journal Article
DEP - 20211112
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC8619340
OTO - NOTNLM
OT  - flip-chip
OT  - high electron mobility transistor (HEMT)
OT  - micro light-emitting diodes (mu-LEDs)
OT  - solder bump bonding
OT  - mu-LED arrays
COIS- The authors declare no conflict of interest.
EDAT- 2021/11/28 06:00
MHDA- 2021/11/28 06:01
PMCR- 2021/11/12
CRDT- 2021/11/27 01:28
PHST- 2021/09/24 00:00 [received]
PHST- 2021/11/04 00:00 [revised]
PHST- 2021/11/09 00:00 [accepted]
PHST- 2021/11/27 01:28 [entrez]
PHST- 2021/11/28 06:00 [pubmed]
PHST- 2021/11/28 06:01 [medline]
PHST- 2021/11/12 00:00 [pmc-release]
AID - nano11113045 [pii]
AID - nanomaterials-11-03045 [pii]
AID - 10.3390/nano11113045 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2021 Nov 12;11(11):3045. doi: 10.3390/nano11113045.