PMID- 34894665
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20211223
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 13
IP  - 50
DP  - 2021 Dec 22
TI  - Expeditiously Crystallized Pure Orthorhombic-Hf(0.5)Zr(0.5)O(2) for Negative 
      Capacitance Field Effect Transistors.
PG  - 60250-60260
LID - 10.1021/acsami.1c21387 [doi]
AB  - Ultralow-power logic devices are next-generation electronics in which their 
      maximum efficacies are realized at minimum input power expenses. The integration 
      of ferroelectric negative capacitors in the regular gate stacks of 
      two-dimensional field-effect transistors addresses two intriguing challenges in 
      today's electronics; short channel effects and high operating voltages. The 
      complementary-metal-oxide-semiconductor-compatible Hf(0.5)Zr(0.5)O(2) (HZO) is an 
      excellent ferroelectric material crystallized in a noncentrosymmetric o-phase. 
      The present work is the first to utilize pulsed laser deposition (PLD)-grown 
      phase-pure ferroelectric HZO to achieve steep slope negative capacitance (NC) in 
      field effect transistors (FETs). A dual-step growth strategy is designed to 
      achieve phase-pure orthorhombic HZO on silicon and other conducting substrates. 
      The room-temperature PLD-grown amorphous HZO is allowed to crystallize using 
      rapid thermal annealing at 600  degrees C. The polycrystalline orthorhombic HZO is 
      further integrated with atomic layer deposition-grown HfO(2) to achieve a stable 
      NC transition. The stack is further integrated into the molybdenum disulfide 
      channel to achieve steep switching and a hysteresis-free operation of the 
      resulting FETs. The subthreshold swings of the FETs are 20.42 and 26.16 mV/dec in 
      forward and reverse bias conditions, respectively.
FAU - Cho, Haewon
AU  - Cho H
AD  - Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science 
      and Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon 16419, South Korea.
FAU - Pujar, Pavan
AU  - Pujar P
AUID- ORCID: 0000-0002-1012-7668
AD  - Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science 
      and Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon 16419, South Korea.
FAU - Choi, Minsu
AU  - Choi M
AD  - Emergent Materials Design Lab, School of Advanced Materials Science and 
      Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon 16419, South Korea.
FAU - Naqi, Muhammad
AU  - Naqi M
AD  - Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science 
      and Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon 16419, South Korea.
FAU - Cho, Yongin
AU  - Cho Y
AD  - Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science 
      and Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon 16419, South Korea.
FAU - Rho, Hyun Yeol
AU  - Rho HY
AD  - Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science 
      and Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon 16419, South Korea.
FAU - Lee, Jaichan
AU  - Lee J
AUID- ORCID: 0000-0002-2730-9492
AD  - Emergent Materials Design Lab, School of Advanced Materials Science and 
      Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon 16419, South Korea.
FAU - Kim, Sunkook
AU  - Kim S
AUID- ORCID: 0000-0003-1747-4539
AD  - Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science 
      and Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon 16419, South Korea.
LA  - eng
PT  - Journal Article
DEP - 20211213
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - crystallization
OT  - ferroelectrics
OT  - molybdenum disulfide
OT  - negative capacitance
OT  - pulsed laser deposition
OT  - steep slope
EDAT- 2021/12/14 06:00
MHDA- 2021/12/14 06:01
CRDT- 2021/12/13 11:14
PHST- 2021/12/14 06:00 [pubmed]
PHST- 2021/12/14 06:01 [medline]
PHST- 2021/12/13 11:14 [entrez]
AID - 10.1021/acsami.1c21387 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2021 Dec 22;13(50):60250-60260. doi: 
      10.1021/acsami.1c21387. Epub 2021 Dec 13.