PMID- 34957687 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20220301 LR - 20220301 IS - 2198-3844 (Electronic) IS - 2198-3844 (Linking) VI - 9 IP - 6 DP - 2022 Feb TI - Electrolyte-Gated Vertical Synapse Array based on Van Der Waals Heterostructure for Parallel Computing. PG - e2103808 LID - 10.1002/advs.202103808 [doi] LID - 2103808 AB - Recently, three-terminal synaptic devices, which separate read and write terminals, have attracted significant attention because they enable nondestructive read-out and parallel-access for updating synaptic weights. However, owing to their structural features, it is difficult to address the relatively high device density compared with two-terminal synaptic devices. In this study, a vertical synaptic device featuring remotely controllable weight updates via e-field-dependent movement of mobile ions in the ion-gel layer is developed. This synaptic device successfully demonstrates all essential synaptic characteristics, such as excitatory/inhibitory postsynaptic current (E/IPSC), paired-pulse facilitation (PPF), and long-term potentiation/depression (LTP/D) by electrical measurements, and exhibits competitive LTP/D characteristics with a dynamic range (G(max) /G(min) ) of 31.3, and asymmetry (AS) of 8.56. The stability of the LTP/D characteristics is also verified through repeated measurements over 50 cycles; the relative standard deviations (RSDs) of G(max) /G(min) and AS are calculated as 1.65% and 0.25%, respectively. These excellent synaptic properties enable a recognition rate of approximately 99% in the training and inference tasks for acoustic and emotional information patterns. This study is expected to be an important foundation for the realization of future parallel computing networks for energy-efficient and high-speed data processing. CI - (c) 2021 The Authors. Advanced Science published by Wiley-VCH GmbH. FAU - Oh, Seyong AU - Oh S AD - Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea. FAU - Lee, Ju-Hee AU - Lee JH AD - Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea. FAU - Seo, Seunghwan AU - Seo S AD - Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea. FAU - Choo, Hyongsuk AU - Choo H AD - Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea. FAU - Lee, Dongyoung AU - Lee D AD - Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea. FAU - Cho, Jeong-Ick AU - Cho JI AD - Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea. FAU - Park, Jin-Hong AU - Park JH AUID- ORCID: 0000-0001-8401-6920 AD - Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea. AD - Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16417, Korea. LA - eng GR - 2019M3F3A1A0107445113/National Research Foundation of Korea/ GR - 2020R1A4A200280612/National Research Foundation of Korea/ GR - 2020M3F3A2A0208247312/National Research Foundation of Korea/ GR - 2021R1A2C201002611/National Research Foundation of Korea/ GR - IO201210-07994-01/Samsung Electronics Co., Ltd/ PT - Journal Article PT - Research Support, Non-U.S. Gov't DEP - 20211226 PL - Germany TA - Adv Sci (Weinh) JT - Advanced science (Weinheim, Baden-Wurttemberg, Germany) JID - 101664569 SB - IM PMC - PMC8867203 OTO - NOTNLM OT - hardware artificial neural networks OT - ion gel OT - parallel computing OT - synapse arrays OT - van der Waals heterostructures OT - vertical synaptic devices COIS- The authors declare no conflict of interest. EDAT- 2021/12/28 06:00 MHDA- 2021/12/28 06:01 PMCR- 2021/12/26 CRDT- 2021/12/27 06:55 PHST- 2021/11/11 00:00 [revised] PHST- 2021/08/30 00:00 [received] PHST- 2021/12/28 06:00 [pubmed] PHST- 2021/12/28 06:01 [medline] PHST- 2021/12/27 06:55 [entrez] PHST- 2021/12/26 00:00 [pmc-release] AID - ADVS3306 [pii] AID - 10.1002/advs.202103808 [doi] PST - ppublish SO - Adv Sci (Weinh). 2022 Feb;9(6):e2103808. doi: 10.1002/advs.202103808. Epub 2021 Dec 26.